| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000,000 pcs
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2000000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMBTH81_F080 is a PNP bipolar junction transistor (BJT) designed for RF applications, manufactured by On Semiconductor. This component is rated for a maximum voltage of 20V and a maximum current of 50mA, with a transition frequency (fT) of 600MHz. It offers a minimum DC current gain (hFE) of 60 at 5mA and 10V.
The transistor is housed in a SOT-23 surface mount package, specifically TO-236-3, SC-59, SOT-23-3. It operates within a temperature range of -55°C to 150°C (TJ) and has a power dissipation of 225mW.
This RF transistor is suitable for various high-frequency circuit designs where a PNP type is required. Its surface mount package facilitates integration into compact electronic assemblies.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MMBTH81_F080 has a maximum operating voltage of 20V.
The MMBTH81_F080 is supplied in a SOT-23 package.
The MMBTH81_F080 operates between -55°C and 150°C (TJ).
The MMBTH81_F080 is RoHS3 Compliant.