MMBTH24-7-F The Diodes Incorporated MMBTH24-7-F is an NPN RF transistor designed for VHF/UHF amplifier applications. It features a 400MHz gain-bandwidth product and comes in a SOT-23-3 surface mount package.
Mfr Part #:

MMBTH24-7-F

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The Diodes Incorporated MMBTH24-7-F is an NPN RF transistor designed for VHF/UHF amplifier applications. It features a 400MHz gain-bandwidth product and comes in a SOT-23-3 surface mount package.
✓ Total Stock: 42,000 pcs
$ Price Range: $0.99

MMBTH24-7-F Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
42,000 pcs
42000 pcs On Request 1 On Request On Request 1707+ On Request On Request

MMBTH24-7-F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Voltage

MMBTH24-7-F Description

Short technical summary and product information.

The MMBTH24-7-F from Diodes Incorporated is an NPN bipolar junction transistor (BJT) specifically engineered for RF applications, including VHF/UHF amplifiers and oscillators. It offers a high current gain-bandwidth product of 400MHz, making it suitable for mixer and RF amplifier circuits operating with collector currents in the range of 100µA to 30mA.

 

Key electrical characteristics include a collector-emitter breakdown voltage of 40V and a continuous collector current rating of 50mA. The transistor is housed in a compact SOT-23-3 surface mount package, facilitating integration into space-constrained designs. Its operating temperature range is -55°C to +150°C.

 

This device is constructed with lead-free plating and is considered a "Green" device, being lead, halogen, and antimony-free, aligning with RoHS compliance standards. The SOT-23-3 package is standard for surface mount components, and the terminals are solderable per MIL-STD-202, Method 208.

MMBTH24-7-F Quick Information

Product Type: NPN RF Transistor
Canonical Name: MMBTH24-7-F NPN RF Transistor
Subcategory: RF Bipolar Junction Transistor (BJT)

MMBTH24-7-F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

MMBTH24-7-F Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBTH24-7-F Features

  • Designed for VHF/UHF amplifier applications.
  • High current gain bandwidth product.
  • Ideal for mixer and RF amplifier applications.
  • NPN transistor type.
  • SOT-23-3 surface mount package.

MMBTH24-7-F Applications

  • VHF/UHF amplifier circuits.
  • High output VHF oscillator circuits.
  • RF mixer applications.
  • RF amplifier circuits.

MMBTH24-7-F FAQs

6 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the MMBTH24-7-F transistor?

The collector-emitter breakdown voltage is 40V.

What is the gain-bandwidth product for this RF transistor?

The current gain-bandwidth product (fT) is 400MHz.

What is the operating temperature range for the MMBTH24-7-F?

The operating and storage temperature range is -55°C to +150°C.

What package type is the MMBTH24-7-F supplied in?

It is supplied in a SOT-23-3 surface mount package.

Is the MMBTH24-7-F RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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