| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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42,000 pcs
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42000 pcs | On Request | 1 | On Request | On Request | 1707+ | On Request | On Request |
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The MMBTH24-7-F from Diodes Incorporated is an NPN bipolar junction transistor (BJT) specifically engineered for RF applications, including VHF/UHF amplifiers and oscillators. It offers a high current gain-bandwidth product of 400MHz, making it suitable for mixer and RF amplifier circuits operating with collector currents in the range of 100µA to 30mA.
Key electrical characteristics include a collector-emitter breakdown voltage of 40V and a continuous collector current rating of 50mA. The transistor is housed in a compact SOT-23-3 surface mount package, facilitating integration into space-constrained designs. Its operating temperature range is -55°C to +150°C.
This device is constructed with lead-free plating and is considered a "Green" device, being lead, halogen, and antimony-free, aligning with RoHS compliance standards. The SOT-23-3 package is standard for surface mount components, and the terminals are solderable per MIL-STD-202, Method 208.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 40V.
The current gain-bandwidth product (fT) is 400MHz.
The operating and storage temperature range is -55°C to +150°C.
It is supplied in a SOT-23-3 surface mount package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.