| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,670 pcs
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2670 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Mounting Type | |
| Tape & Reel |
The ON Semiconductor MMBTH10LT1G is a high-performance NPN silicon transistor specifically engineered for VHF and UHF frequency applications. This device offers a maximum collector-emitter voltage (VCEO) of 25V and a collector-base voltage (VCBO) of 30V, making it suitable for various RF circuits.
Key electrical characteristics include a minimum DC current gain (hFE) of 60 and a current-gain bandwidth product (fT) of 650 MHz at 100 MHz. The transistor exhibits a low collector-emitter saturation voltage (VCE(sat)) of 0.5V and a base-emitter on-voltage (VBE) of 0.95V, ensuring efficient operation.
Packaged in a compact SOT-23 surface-mount case, the MMBTH10LT1G is designed for ease of integration into printed circuit boards. Its thermal characteristics include a total device dissipation of 225 mW on an FR-5 board, with a junction-to-ambient thermal resistance of 556 °C/W. The operating temperature range is from -55°C to +150°C.
This transistor is Pb-free, aligning with modern environmental standards. Its robust specifications make it a reliable choice for RF amplification and switching applications in telecommunications, broadcasting, and other high-frequency systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 25 Vdc.
The current-gain bandwidth product (fT) is a minimum of 650 MHz at 100 MHz.
The transistor is supplied in a SOT-23 package.
The junction and storage temperature range is -55°C to +150°C.
Yes, the G-suffix denotes a Pb-free lead finish.