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1,151,592 pcs
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1151592 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor MMBTH10LT1G is an NPN bipolar junction transistor (BJT) specifically designed for RF applications. It offers a collector-emitter breakdown voltage of 25V and a transition frequency of 650MHz, making it suitable for various signal amplification and switching tasks.
This transistor is housed in a compact SOT-23-3 surface-mount package, ideal for space-constrained designs. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 225mW.
The MMBTH10LT1G is commonly used in low-power switching and amplification circuits, including signal amplification, low-level signal processing, and as a switch in audio and RF applications. Its small package size also makes it suitable for portable and space-constrained devices.
Environmental compliance includes RoHS3 compliance and a Moisture Sensitivity Level (MSL) of 1. The REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 25V.
The transition frequency is 650MHz.
The minimum DC current gain (hFE) is 60 at 4mA collector current and 10V collector-emitter voltage.
The maximum power dissipation is 225mW.
The operating temperature range is -55°C to 150°C.
The MMBTH10LT1G is supplied in a SOT-23-3 package.
The RoHS status is ROHS3 Compliant.