| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,225 pcs
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2225 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMBTH10-7-F from Diodes Incorporated is an NPN bipolar junction transistor (BJT) specifically designed for RF applications, including VHF/UHF amplifiers and oscillators. It features a high current gain-bandwidth product of 650MHz, making it suitable for mixer and RF amplifier circuits.
Key electrical specifications include a collector-emitter breakdown voltage of 25V, a continuous collector current of up to 50mA, and a maximum power dissipation of 300mW. The transistor operates within a wide temperature range of -55°C to +150°C.
This device is housed in a compact SOT-23-3 surface mount package, ideal for space-constrained designs. It is qualified to AEC-Q101 standards for high reliability and is manufactured using lead, halogen, and antimony-free materials, aligning with RoHS compliance.
Applications include high output VHF oscillators and RF amplifier stages where performance and reliability are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 25V.
The maximum continuous collector current is 50mA.
The transition frequency is 650MHz.
The operating temperature range is -55°C to +150°C.
It is supplied in a SOT-23-3 surface mount package.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.