| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,921 pcs
|
6921 pcs | On Request | 1 | On Request | On Request | 2010 | On Request | On Request |
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| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
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| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type |
The MMBTH10-4LT1G from onsemi is an NPN bipolar junction transistor (BJT) specifically designed for RF applications. This component is housed in a compact SOT-23-3 (TO-236) surface mount package, making it suitable for space-constrained designs.
Key electrical characteristics include a maximum collector-emitter breakdown voltage of 25V and a transition frequency of 800MHz. It can handle a maximum power dissipation of 225mW. The DC current gain (hFE) is a minimum of 120 at 4mA collector current and 10V collector-emitter voltage.
The operating temperature range for this transistor is from -55°C to 150°C. Its surface mount configuration simplifies integration into printed circuit boards using standard reflow soldering processes.
This RF transistor is appropriate for various high-frequency circuit designs where signal amplification or switching is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The transistor type is NPN.
The maximum collector-emitter breakdown voltage is 25V.
The transition frequency is 800MHz.
The maximum power dissipation is 225mW.
The minimum DC current gain (hFE) is 120 at 4mA collector current and 10V collector-emitter voltage.
The operating temperature range is -55°C to 150°C.
The MMBTH10-4LT1G is in a Surface Mount package, specifically TO-236-3, SC-59, SOT-23-3.