| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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96,000 pcs
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96000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Halogen Free | |
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| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Voltage |
The MMBTH10-4LT1G from On Semiconductor is an NPN silicon RF transistor. It is designed for VHF/UHF applications and comes in a compact SOT-23-3 surface mount package.
Key electrical specifications include a collector-emitter breakdown voltage of 25V, a collector-base breakdown voltage of 30V, and an emitter-base breakdown voltage of 3V. The device offers a transition frequency of 800MHz and a maximum power dissipation of 225mW. Its DC current gain (hFE) is a minimum of 120 at 4mA collector current and 10V collector-emitter voltage. The collector-emitter saturation voltage is a maximum of 0.5V, and the base-emitter on voltage is a maximum of 0.95V.
This transistor operates within a junction temperature range of -55°C to +150°C. It is suitable for surface mount applications and is provided in tape and reel packaging with a standard package quantity of 3000 units.
The MMBTH10-4LT1G is Pb-free and Halogen-free, complying with RoHS standards. Its SOT-23 package makes it ideal for space-constrained designs in RF circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 25 Vdc.
The operating temperature range is -55°C to +150°C.
The MMBTH10-4LT1G is available in a SOT-23-3 (TO-236) package.
Yes, the MMBTH10-4LT1G is RoHS3 Compliant.