| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,860 pcs
|
2860 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,322 pcs
|
1322 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMBTH10 is an NPN bipolar junction transistor designed for RF applications. It features a collector-emitter breakdown voltage of 25V and a maximum collector current of 50mA.
With a transition frequency of 650MHz, this transistor is suitable for various RF circuits. It has a maximum power dissipation of 300mW and a minimum DC current gain (hFE) of 60 at 4mA and 10V.
The MMBTH10 is available in a surface mount package, specifically the TO-236-3, SC-59, or SOT-23-3. It operates within a temperature range of -55°C to 150°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MMBTH10 operates from -55°C to 150°C (TJ).
The maximum collector current for the MMBTH10 is 50mA.
The transition frequency of the MMBTH10 is 650MHz.
The MMBTH10 is available in a TO-236-3, SC-59, SOT-23-3 package.
The MMBTH10 is ROHS3 Compliant.