| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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24,000 pcs
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24000 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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The MMBTA92 from STMicroelectronics is a PNP bipolar junction transistor (BJT) specifically designed for high voltage driver applications. It offers a robust collector-emitter breakdown voltage of 300V and can handle a continuous collector current of up to 500mA.
Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 30mA and 10V, and a typical current gain-bandwidth product (fT) of 50MHz. The transistor exhibits a collector-emitter saturation voltage (Vce(sat)) of 500mV at 2mA base current and 20mA collector current.
This device is housed in a compact SOT-23-3 surface-mount package, making it suitable for space-constrained designs. The operating and storage junction temperature range is from -55°C to +150°C. Its high voltage capability makes it a suitable choice for various driver circuits and high-voltage amplification tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MMBTA92 has a maximum collector-emitter voltage (Vceo) of 300V.
The MMBTA92 can handle a continuous collector current (Ic) of 500mA.
The operating and storage junction temperature range for the MMBTA92 is -55°C to +150°C.
The MMBTA92 is available in a SOT-23-3 surface-mount package.
The MMBTA92 is RoHS3 Compliant.