MMBTA64LT1G The MMBTA64LT1G is a PNP Darlington transistor from ON Semiconductor. It features a 30V collector-emitter voltage and 500mA continuous current, housed in a surface-mount SOT-23-3 package.
Mfr Part #:

MMBTA64LT1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBTA64LT1G is a PNP Darlington transistor from ON Semiconductor. It features a 30V collector-emitter voltage and 500mA continuous current, housed in a surface-mount SOT-23-3 package.
✓ Total Stock: 52,252 pcs
$ Price Range: $0.99

MMBTA64LT1G Available from 4 distributors

✓ Authorised
✓ Non-Authorised

MMBTA64LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBTA64LT1G Description

Short technical summary and product information.

The MMBTA64LT1G is a PNP Darlington transistor manufactured by ON Semiconductor. This component is designed for applications requiring high current gain, offering a minimum DC current gain of 20,000 at 100mA and 5V.

 

Key electrical specifications include a maximum collector-emitter voltage of 30Vdc and a continuous collector current rating of 500mAdc. The transistor also has a gain-bandwidth product of 125MHz. Its saturation voltage (Vce(sat)) is a maximum of 1.5Vdc at 100mA collector current and 100µA base current.

 

This device operates within a temperature range of -55°C to 150°C. It is supplied in a compact SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs. The transistor is RoHS compliant and halogen-free.

 

With its high gain and compact package, the MMBTA64LT1G is well-suited for various switching and amplification tasks in electronic circuits.

MMBTA64LT1G Quick Information

Product Type: PNP Darlington Transistor
Series: MMBTA64LT1G
Canonical Name: MMBTA64LT1G PNP Darlington Transistor
Subcategory: Bipolar (BJT) - Single

MMBTA64LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MMBTA64LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBTA64LT1G Features

  • PNP Darlington transistor for high gain.
  • 30V collector-emitter voltage rating.
  • 500mA continuous collector current.
  • High DC current gain of 20000.
  • Compact SOT-23-3 surface-mount package.

MMBTA64LT1G Applications

  • Suitable for high gain amplification.
  • Used in general purpose switching.
  • Ideal for space-constrained designs.
  • Applications requiring PNP Darlington topology.

MMBTA64LT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBTA64LT1G?

The maximum collector-emitter voltage is -30 Vdc.

What is the continuous collector current rating?

The continuous collector current rating is 500 mAdc.

What is the minimum DC current gain (hFE) at 100mA and 5V?

The minimum DC current gain (hFE) is 20,000 at 100mA and 5V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What type of transistor is the MMBTA64LT1G?

It is a PNP Darlington transistor.

What package is the MMBTA64LT1G supplied in?

It is supplied in a SOT-23-3 (TO-236) surface-mount package.

Home

Categories