MMBTA63LT1 The MMBTA63LT1 is a PNP Silicon Darlington Transistor from On Semiconductor, housed in a SOT-23 package. It offers a collector-emitter voltage of -30V and a continuous collector current of 500mA.
Mfr Part #:

MMBTA63LT1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBTA63LT1 is a PNP Silicon Darlington Transistor from On Semiconductor, housed in a SOT-23 package. It offers a collector-emitter voltage of -30V and a continuous collector current of 500mA.
Total Stock: 2,975 pcs
$ Price Range: $0.99

MMBTA63LT1 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,975 pcs
2975 pcs On Request 1 On Request On Request On Request On Request On Request

MMBTA63LT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter On Voltage
Collector - Emitter Saturation Voltage
Collector Current
Collector Cutoff Current
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Voltage
Current-Gain - Bandwidth Product
DC Current Gain (Minimum @ IC = 100 mAdc, VCE = 5.0 Vdc)
DC Current Gain (Minimum @ IC = −10 mAdc, VCE = −5.0 Vdc)
Emitter Cutoff Current
Emitter-Base Voltage
Halogen Free
Junction and Storage Temperature
Mounting Type
Pb-Free
Total Device Dissipation (Maximum @ Alumina Substrate, TA = 25 °C)
Total Device Dissipation (Maximum @ FR -5 Board, TA = 25 °C)

MMBTA63LT1 Description

Short technical summary and product information.

The MMBTA63LT1 is a PNP Silicon Darlington Transistor manufactured by On Semiconductor. It is designed for applications requiring high gain and is packaged in a compact SOT-23 surface-mount case.

 

Key electrical specifications include a maximum collector-emitter voltage (Vces) of -30V and a continuous collector current (Ic) of 500mA. The device exhibits a high DC current gain (hFE) and a low collector-emitter saturation voltage (VCE(sat)) of -1.5V maximum at 100mA.

 

This transistor operates within a junction and storage temperature range of -55°C to +150°C. The datasheet indicates it is Pb-Free and Halogen Free, with RoHS compliance. The SOT-23 package is suitable for automated assembly processes.

 

Applications for the MMBTA63LT1 include general-purpose amplification and switching where high current gain is beneficial. Its small package size makes it ideal for space-constrained designs.

MMBTA63LT1 Quick Information

Product Type: Transistor
Canonical Name: MMBTA63LT1 PNP Silicon Darlington Transistor
Subcategory: PNP Silicon

MMBTA63LT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBTA63LT1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBTA63LT1 Features

  • PNP Silicon Darlington Transistor
  • Maximum Vces of -30V
  • Continuous Ic of 500mA
  • SOT-23 Surface Mount Package
  • High DC Current Gain

MMBTA63LT1 Applications

  • General purpose amplification
  • Switching applications
  • High gain circuits
  • Space-constrained designs

MMBTA63LT1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBTA63LT1?

The maximum collector-emitter voltage (Vces) for the MMBTA63LT1 is -30 Vdc.

What is the continuous collector current rating of the MMBTA63LT1?

The MMBTA63LT1 has a continuous collector current (Ic) rating of 500 mAdc.

What is the package type for the MMBTA63LT1?

The MMBTA63LT1 is supplied in a SOT-23 package.

What is the operating temperature range for the MMBTA63LT1?

The junction and storage temperature range for the MMBTA63LT1 is -55°C to +150°C.

Is the MMBTA63LT1 RoHS compliant?

Yes, the MMBTA63LT1 is RoHS3 Compliant.

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