MMBT5551LT1G
On Semiconductor
The On Semiconductor MMBT5551LT1G is an NPN bipolar junction transistor in a SOT-23-3 package. It offers a 160V collector-emitter voltage and a 600mA continuous collector current.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,975 pcs
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2975 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The MMBTA63LT1 is a PNP Silicon Darlington Transistor manufactured by On Semiconductor. It is designed for applications requiring high gain and is packaged in a compact SOT-23 surface-mount case.
Key electrical specifications include a maximum collector-emitter voltage (Vces) of -30V and a continuous collector current (Ic) of 500mA. The device exhibits a high DC current gain (hFE) and a low collector-emitter saturation voltage (VCE(sat)) of -1.5V maximum at 100mA.
This transistor operates within a junction and storage temperature range of -55°C to +150°C. The datasheet indicates it is Pb-Free and Halogen Free, with RoHS compliance. The SOT-23 package is suitable for automated assembly processes.
Applications for the MMBTA63LT1 include general-purpose amplification and switching where high current gain is beneficial. Its small package size makes it ideal for space-constrained designs.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vces) for the MMBTA63LT1 is -30 Vdc.
The MMBTA63LT1 has a continuous collector current (Ic) rating of 500 mAdc.
The MMBTA63LT1 is supplied in a SOT-23 package.
The junction and storage temperature range for the MMBTA63LT1 is -55°C to +150°C.
Yes, the MMBTA63LT1 is RoHS3 Compliant.
