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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Diodes Incorporated MMBTA63-7-F is a PNP Darlington transistor designed for low power amplification and switching applications. It features a high current gain (hFE) of 10000 at 100mA and 5V, with a maximum collector-emitter voltage (Vceo) of 30V and a continuous collector current (Ic) of 500mA.
This transistor is housed in a compact SOT-23-3 surface-mount package, making it suitable for space-constrained designs. It operates within a temperature range of -55°C to +150°C and has a power dissipation of 300mW. The device is qualified to AEC-Q101 standards for high reliability.
Key electrical characteristics include a Vce saturation of 1.5V at 100µA/100mA and a frequency response up to 125MHz. The MMBTA63-7-F is also noted for its epitaxial planar die construction and matte tin-plated leads, solderable per MIL-STD-202.
This component is RoHS 3 compliant, lead-free, and halogen-free, aligning with environmental standards. Its complementary NPN types are MMBTA13 and MMBTA14.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the MMBTA63-7-F is 30V.
The MMBTA63-7-F has a continuous collector current rating of 500mA.
The minimum DC current gain (hFE) for the MMBTA63-7-F is 10000 at 100mA and 5V.
The MMBTA63-7-F operates between -55°C and +150°C.
The MMBTA63-7-F is supplied in a SOT-23-3 surface-mount package.
Yes, the MMBTA63-7-F is RoHS 3 compliant.
The Moisture Sensitivity Level (MSL) for the MMBTA63-7-F is Level 1.