| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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85,020 pcs
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85020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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| Tape & Reel | |
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The MMBTA56WT1G is a PNP silicon bipolar junction transistor (BJT) manufactured by On Semiconductor. It is designed for various electronic applications requiring signal amplification and switching.
Key electrical characteristics include a maximum collector-emitter voltage of 80V and a continuous collector current of 500mA. The transistor offers a DC current gain (hFE) of at least 100 at 100mA and 1V, with a transition frequency of 50MHz. Its collector-emitter saturation voltage is a maximum of 0.25V at 100mA collector current and 10mA base current.
This device operates within a junction and storage temperature range of -55°C to +150°C. It is housed in a compact SC-70 (SOT-323) surface-mount package, making it suitable for space-constrained designs. The transistor is Pb-Free and Halogen Free, complying with RoHS standards.
With its robust specifications and small footprint, the MMBTA56WT1G is a reliable choice for general-purpose transistor circuits, drive circuits, and signal processing in both commercial and industrial electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBTA56WT1G is -80 Vdc.
The MMBTA56WT1G has a continuous collector current (IC) rating of -500 mAdc.
The operating temperature range for the MMBTA56WT1G is -55°C to +150°C.
The MMBTA56WT1G is supplied in an SC-70, SOT-323 package.
Yes, the MMBTA56WT1G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MMBTA56WT1G is 1 Unlimited.