MMBTA56Q-7-F The Diodes Incorporated MMBTA56Q-7-F is a PNP bipolar transistor designed for amplification and switching applications. It features an 80V collector-emitter voltage and 500mA continuous collector current.
Mfr Part #:

MMBTA56Q-7-F

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The Diodes Incorporated MMBTA56Q-7-F is a PNP bipolar transistor designed for amplification and switching applications. It features an 80V collector-emitter voltage and 500mA continuous collector current.
Total Stock: 34,490 pcs
$ Price Range: $0.99

MMBTA56Q-7-F Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
31,020 pcs
31020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,470 pcs
3470 pcs On Request 1 On Request On Request On Request On Request On Request

MMBTA56Q-7-F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current
Collector-Emitter Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Power Dissipation
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBTA56Q-7-F Description

Short technical summary and product information.

The MMBTA56Q-7-F from Diodes Incorporated is a PNP bipolar transistor housed in a compact SOT-23 surface mount package. This device is suitable for low power amplification and switching applications.

 

Key electrical characteristics include a maximum collector-emitter voltage of 80V and a continuous collector current of 500mA. It offers a DC current gain (hFE) of 100 at 100mA and 1V, with a Vce saturation of 250mV at 10mA and 100mA. The transistor operates across a wide temperature range of -55°C to 150°C.

 

This component is designed with epitaxial planar die construction and features matte tin plated leads, making it solderable per MIL-STD-202. It is also noted as being totally lead-free, fully RoHS compliant, and halogen and antimony free, aligning with "Green" device standards.

MMBTA56Q-7-F Quick Information

Product Type: PNP Transistor
Canonical Name: MMBTA56Q-7-F PNP Bipolar Transistor
Subcategory: PNP

MMBTA56Q-7-F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

MMBTA56Q-7-F Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBTA56Q-7-F Features

  • PNP bipolar transistor for amplification.
  • 80V collector-emitter voltage rating.
  • 500mA continuous collector current.
  • Compact SOT-23 surface mount package.
  • RoHS3 compliant and halogen-free.

MMBTA56Q-7-F Applications

  • Suitable for low-power switching applications.
  • Used in automotive electronic circuits.
  • Ideal for signal amplification in compact devices.
  • Applicable in portable and battery-powered systems.

MMBTA56Q-7-F FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the MMBTA56Q-7-F?

The collector-emitter voltage for the MMBTA56Q-7-F is 80V.

What is the continuous collector current of the MMBTA56Q-7-F transistor?

The MMBTA56Q-7-F transistor has a continuous collector current of 500mA.

What is the power dissipation of the MMBTA56Q-7-F?

The power dissipation for the MMBTA56Q-7-F is 310mW.

What is the operating temperature range for the MMBTA56Q-7-F?

The operating temperature range for the MMBTA56Q-7-F is -55°C to 150°C.

What package type is the MMBTA56Q-7-F supplied in?

The MMBTA56Q-7-F is supplied in a SOT-23-3 package.

Is the MMBTA56Q-7-F RoHS compliant?

Yes, the MMBTA56Q-7-F is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for the MMBTA56Q-7-F?

The Moisture Sensitivity Level (MSL) for the MMBTA56Q-7-F is Level 1.

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