MMBTA56LT3G The MMBTA56LT3G is a PNP silicon transistor from ON Semiconductor. It offers a maximum collector-emitter voltage of 80V and a continuous collector current of 500mA.
Mfr Part #:

MMBTA56LT3G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBTA56LT3G is a PNP silicon transistor from ON Semiconductor. It offers a maximum collector-emitter voltage of 80V and a continuous collector current of 500mA.
✓ Total Stock: 709,982 pcs
$ Price Range: $0.99

MMBTA56LT3G Available from 4 distributors

✓ Authorised
✓ Non-Authorised

MMBTA56LT3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBTA56LT3G Description

Short technical summary and product information.

The MMBTA56LT3G is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. This device is designed for general-purpose applications requiring a robust transistor in a compact package.

 

Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of -80V and a continuous collector current (IC) of -500mA. The DC current gain (hFE) is a minimum of 100 at 100mA and 1V. It also features a low saturation voltage (VCE(sat)) of 250mV at 100mA/10mA and a current-gain bandwidth product (fT) of 50MHz.

 

This transistor is housed in a SOT-23-3 surface-mount package, making it suitable for automated assembly processes. The operating temperature range is -55°C to 150°C.

 

The MMBTA56LT3G series is Pb-free and halogen-free, adhering to RoHS compliance standards. The 'S' prefix indicates suitability for automotive applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.

MMBTA56LT3G Quick Information

Product Type: PNP Transistor
Series: MMBTA56L Series
Canonical Name: MMBTA56LT3G PNP Silicon Transistor
Subcategory: Bipolar (BJT) - Single

MMBTA56LT3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBTA56LT3G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBTA56LT3G Features

  • PNP silicon transistor for general applications.
  • Maximum 80V collector-emitter voltage.
  • Continuous collector current of 500mA.
  • Surface mount SOT-23-3 package.
  • Pb-free and halogen-free construction.

MMBTA56LT3G Applications

  • Suitable for automotive applications.
  • Used in general electronic circuits.
  • Ideal for signal amplification tasks.
  • Compact design for PCB integration.

MMBTA56LT3G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBTA56LT3G?

The maximum collector-emitter voltage (VCEO) for the MMBTA56LT3G is -80 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) for the MMBTA56LT3G is -500 mAdc.

What is the operating temperature range?

The operating temperature range for this transistor is -55°C to 150°C.

What package type is the MMBTA56LT3G supplied in?

The MMBTA56LT3G is supplied in a SOT-23-3 (TO-236) surface mount package.

Is the MMBTA56LT3G RoHS compliant?

Yes, the MMBTA56LT3G is RoHS3 compliant.

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