| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMBTA56LT1G from ON Semiconductor is a PNP bipolar junction transistor (BJT) housed in a compact SOT-23-3 package. This device is suitable for various switching and amplification applications.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of -80V and a maximum collector current (IC) of 500mA. The DC current gain (hFE) is a minimum of 100 at 100mA collector current and 1V VCE. It also offers a current-gain bandwidth product (fT) of 50MHz.
Thermal performance is rated with a total device dissipation of 225mW on an FR-5 board at 25°C, with a junction-to-ambient thermal resistance of 556°C/W. The operating and storage temperature range is from -55°C to +150°C.
This transistor is surface-mountable and comes in the TO-236-3, SC-59, SOT-23-3 package. It is Pb-free and Halogen-free, complying with RoHS standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBTA56LT1G is -80 Vdc.
The continuous collector current (IC) for this transistor is 500 mAdc.
The operating temperature range is -55°C to +150°C.
The MMBTA56LT1G is supplied in a SOT-23-3 (TO-236) package.
Yes, this device is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1.