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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,544 pcs
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8544 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,765 pcs
|
2765 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,100 pcs
|
2100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter On Voltage | |
| Collector - Emitter Saturation Voltage | |
| Collector Current - Continuous | |
| Collector Cutoff Current (Maximum @ VCB = -80 Vdc, IE = 0) | |
| Collector Cutoff Current (Maximum @ VCE = 60 Vdc, IB = 0) | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| Current-Gain - Bandwidth Product | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Voltage | |
| Frequency | |
| Halogen Free | |
| Junction and Storage Temperature | |
| Mounting Type | |
| Pb-Free | |
| Power | |
| Supplier Device Package | |
| Thermal Resistance Junction Ambient (Nominal @ Alumina Substrate) | |
| Thermal Resistance Junction Ambient (Nominal @ FR -5 Board) | |
| Total Device Dissipation (Maximum @ TA=25 °C, Alumina Substrate) | |
| Total Device Dissipation (Maximum @ TA=25 °C, FR -5 Board) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMBTA56LT1 is a PNP silicon bipolar junction transistor (BJT) manufactured by On Semiconductor. It is part of the MMBTA56L series, designed for automotive and other applications requiring unique site and control change requirements, and is AEC-Q101 qualified.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of -80V and a maximum continuous collector current (IC) of -500mA. The device offers a DC current gain (hFE) of 100 at 100mA and 1V, and a collector-emitter saturation voltage (VCE(sat)) of 250mV at 10mA/100mA. Its current-gain bandwidth product (fT) is 50MHz at 100mA and 1V.
This transistor is housed in a SOT-23-3 (TO-236-3) surface-mount package, suitable for compact designs. It has a total device power dissipation of 225mW on an FR-5 board at 25°C. The operating and storage temperature range is -55°C to +150°C.
The MMBTA56LT1 is Pb-free, halogen-free, BFR-free, and RoHS compliant, making it suitable for environmentally conscious designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the MMBTA56LT1 is -80 Vdc.
The MMBTA56LT1 has a continuous collector current rating of -500 mAdc.
The MMBTA56LT1 is supplied in a SOT-23-3 (TO-236) package.
Yes, the MMBTA56LT1 is RoHS3 compliant.
The total device power dissipation for the MMBTA56LT1 is 225 mW at 25°C on an FR-5 board.
The current-gain bandwidth product (fT) for the MMBTA56LT1 is 50 MHz.