MMBTA56-7-F The Diodes Incorporated MMBTA56-7-F is a PNP bipolar junction transistor in a SOT-23-3 package. It features an 80V collector-emitter voltage and 500mA continuous collector current.
Mfr Part #:

MMBTA56-7-F

Available from 5 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The Diodes Incorporated MMBTA56-7-F is a PNP bipolar junction transistor in a SOT-23-3 package. It features an 80V collector-emitter voltage and 500mA continuous collector current.
Total Stock: 446,083 pcs
$ Price Range: $0.99

MMBTA56-7-F Available from 5 distributors

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MMBTA56-7-F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Electrostatic Discharge
Frequency
Halogen Free
IC (Maximum)
Mounting Type
Operating Temperature
Operating and Storage Temperature Range
Package Material
Pd (Maximum @ Ta=25 °C)
Power
RθJA (Nominal @ TA = +25 ° C)
Supplier Device Package
Terminals
Thermal Resistance (Junction to Leads)
Transistor Type
VCEO (Maximum)
Vce Saturation (Max) @ Ib, Ic
Voltage
Weight

MMBTA56-7-F Description

Short technical summary and product information.

The Diodes Incorporated MMBTA56-7-F is a PNP bipolar junction transistor designed for low power amplification and switching applications. It is housed in a compact SOT-23-3 surface mount package.

 

Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 500mA. The transistor offers a minimum DC current gain (hFE) of 100 at 100mA and 1V, with a Vce saturation voltage of 250mV at 10mA and 100mA. Its transition frequency (fT) is 50MHz.

 

This device operates within a temperature range of -55°C to +150°C. It is constructed with epitaxial planar die technology and features matte tin plated leads, making it solderable per MIL-STD-202, Method 208. The package material is molded plastic with a UL Flammability Classification Rating of 94V-0.

 

The MMBTA56-7-F is RoHS3 compliant, lead-free, and halogen-free, making it suitable for environmentally conscious designs. Its complementary NPN type is the MMBTA05/MMBTA06.

MMBTA56-7-F Quick Information

Product Type: PNP Medium Power Transistor
Canonical Name: MMBTA56-7-F PNP Medium Power Transistor
Subcategory: Bipolar (BJT) - Single

MMBTA56-7-F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

MMBTA56-7-F Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBTA56-7-F Features

  • PNP bipolar junction transistor.
  • 80V collector-emitter voltage rating.
  • 500mA continuous collector current.
  • SOT-23-3 surface mount package.
  • RoHS3 compliant and halogen-free.

MMBTA56-7-F Applications

  • Used in switching power supplies
  • Suitable for amplification circuits
  • Ideal for compact electronic devices
  • Applicable in automotive and industrial electronics

MMBTA56-7-F FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBTA56-7-F?

The maximum collector-emitter voltage (VCEO) for the MMBTA56-7-F is 80V.

What is the continuous collector current rating?

The continuous collector current (IC) rating for the MMBTA56-7-F is 500mA.

What is the operating temperature range?

The operating and storage temperature range for this transistor is -55°C to +150°C.

What package type is the MMBTA56-7-F supplied in?

The MMBTA56-7-F is supplied in a SOT-23-3 package.

Is the MMBTA56-7-F RoHS compliant?

Yes, the MMBTA56-7-F is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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