BC817-25,215
Nexperia USA Inc.
NPN general-purpose transistor, 45V VCEO, 500mA collector current, 100MHz transition frequency, in SOT23 surface-mount package.
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430 pcs
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430 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMBTA55LT1 is a PNP silicon bipolar transistor manufactured by On Semiconductor. It is designed for various driver applications and comes in a compact SOT-23 surface-mount package.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of -60V and a maximum continuous collector current (IC) of -500mA. The device exhibits a minimum DC current gain (hFE) of 100 at various test conditions. Its collector-emitter saturation voltage (VCE(sat)) is a maximum of -0.25V, and the base-emitter on voltage (VBE(on)) is a maximum of -1.2V.
With a current-gain bandwidth product (fT) of 50MHz, the MMBTA55LT1 is suitable for applications requiring moderate frequency response. The transistor operates within a junction and storage temperature range of -55°C to +150°C.
This component is RoHS3 compliant and comes in a Pb-Free package, making it suitable for environmentally conscious designs. The SOT-23 package is ideal for space-constrained applications requiring surface mounting.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-60 Vdc
-500 mAdc
SOT-23
RoHS3 Compliant
1 Unlimited
100
50 MHz
