MMBTA55LT1 The MMBTA55LT1 is a PNP silicon bipolar transistor from On Semiconductor. It features a collector-emitter voltage of -60V and a continuous collector current of -500mA.
Mfr Part #:

MMBTA55LT1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBTA55LT1 is a PNP silicon bipolar transistor from On Semiconductor. It features a collector-emitter voltage of -60V and a continuous collector current of -500mA.
Total Stock: 430 pcs
$ Price Range: $0.99

MMBTA55LT1 Available from 1 distributor

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MMBTA55LT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter On Voltage
Collector - Emitter Saturation Voltage
Collector Current - Continuous
Collector Cutoff Current
Current-Gain - Bandwidth Product
Emitter-Base Breakdown Voltage
Emitter-Base Voltage
ICBO (Maximum @ VCB = 60 Vdc, IE = 0)
ICBO (Maximum @ VCB = 80 Vdc, IE = 0)
Junction and Storage Temperature
Mounting Type
PD (Maximum @ Alumina Substrate, TA=25 °C)
V(BR)CEO (Minimum @ IC = 1.0 mAdc, IB = 0)
VCBO (Maximum)
VCEO (Maximum)
hFE (Minimum @ IC = -10 mAdc, VCE = -1.0 Vdc)
hFE (Minimum @ IC = -100 mAdc, VCE = -1.0 Vdc)
pd (Maximum @ FR -5 Board, TA=25 °C)

MMBTA55LT1 Description

Short technical summary and product information.

The MMBTA55LT1 is a PNP silicon bipolar transistor manufactured by On Semiconductor. It is designed for various driver applications and comes in a compact SOT-23 surface-mount package.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of -60V and a maximum continuous collector current (IC) of -500mA. The device exhibits a minimum DC current gain (hFE) of 100 at various test conditions. Its collector-emitter saturation voltage (VCE(sat)) is a maximum of -0.25V, and the base-emitter on voltage (VBE(on)) is a maximum of -1.2V.

 

With a current-gain bandwidth product (fT) of 50MHz, the MMBTA55LT1 is suitable for applications requiring moderate frequency response. The transistor operates within a junction and storage temperature range of -55°C to +150°C.

 

This component is RoHS3 compliant and comes in a Pb-Free package, making it suitable for environmentally conscious designs. The SOT-23 package is ideal for space-constrained applications requiring surface mounting.

MMBTA55LT1 Quick Information

Product Type: Bipolar Transistor
Canonical Name: MMBTA55LT1 PNP Silicon Transistor
Subcategory: PNP

MMBTA55LT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free Package

MMBTA55LT1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBTA55LT1 Features

  • PNP silicon bipolar transistor.
  • Collector-Emitter Voltage: -60V.
  • Continuous Collector Current: -500mA.
  • SOT-23 surface mount package.
  • RoHS3 compliant.

MMBTA55LT1 Applications

  • Suitable for high-voltage switching applications.
  • Used in transistor driver circuits.
  • Ideal for power switching in industrial equipment.
  • Applicable in automotive electronic control units.
  • Employed in signal amplification circuits.

MMBTA55LT1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBTA55LT1?

-60 Vdc

What is the continuous collector current rating of the MMBTA55LT1?

-500 mAdc

What is the package type for the MMBTA55LT1 transistor?

SOT-23

What is the RoHS status of the MMBTA55LT1?

RoHS3 Compliant

What is the Moisture Sensitivity Level (MSL) for the MMBTA55LT1?

1 Unlimited

What is the minimum DC current gain (hFE) for the MMBTA55LT1?

100

What is the current-gain bandwidth product (fT) of the MMBTA55LT1?

50 MHz

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