| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,451 pcs
|
1451 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Tape & Reel |
The ON Semiconductor MMBTA43LT1 is a general-purpose NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a high collector-emitter voltage rating of 200V and a maximum DC collector current of 0.5A.
This transistor operates within a temperature range of -55C to +150C, making it suitable for demanding environments. The gain bandwidth product (fT) is a minimum of 50MHz, and the DC collector/base gain (hFE) is a minimum of 25 at 1mA and 10V. The maximum power dissipation is rated at 300mW.
The MMBTA43LT1 comes in a compact SOT-23 surface-mount package, facilitating integration into dense circuit designs. It is supplied on tape and reel for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBTA43LT1 is 200V.
The maximum DC collector current for the MMBTA43LT1 is 0.5A.
The MMBTA43LT1 operates between -55C and +150C.
The MMBTA43LT1 is supplied in a SOT-23 package.
The gain bandwidth product (fT) of the MMBTA43LT1 is a minimum of 50MHz.
The minimum DC collector/base gain (hFE) for the MMBTA43LT1 is 25 at 1mA and 10V.
