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MMBTA42LT3G The MMBTA42LT3G is an NPN bipolar transistor from On Semiconductor. It offers a high 300V collector-emitter voltage and a continuous collector current of 500mA.
Mfr Part #:

MMBTA42LT3G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBTA42LT3G is an NPN bipolar transistor from On Semiconductor. It offers a high 300V collector-emitter voltage and a continuous collector current of 500mA.
✓ Total Stock: 1,393,867 pcs
$ Price Range: $0.02

MMBTA42LT3G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
1,393,830 pcs
On Request
1393830 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
37 pcs
On Request
37 pcs On Request 1 On Request On Request On Request On Request On Request
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MMBTA42LT3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MMBTA42LT3G Description

Short technical summary and product information.

The MMBTA42LT3G is a high-voltage NPN silicon transistor manufactured by On Semiconductor. It is designed for applications requiring high voltage handling, with a maximum collector-emitter voltage of 300V and a continuous collector current of 500mA.

 

This transistor features a DC current gain (hFE) of at least 40 at 10mA and 10V. The collector-emitter saturation voltage is a maximum of 500mV at 2mA base current and 20mA collector current. It operates over a wide temperature range from -55°C to 150°C.

 

The MMBTA42LT3G is supplied in a compact SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs. It is Pb-Free and Halogen Free, and meets RoHS3 compliance standards. The device has a frequency response up to 50MHz.

 

Key electrical characteristics include a breakdown voltage of 300V for collector-emitter and collector-base, and 6.0V for emitter-base. Leakage currents are minimal, with collector cutoff at 0.1µAdc and emitter cutoff at 0.1µAdc under specified conditions.

MMBTA42LT3G Quick Information

Product Type: NPN Transistor
Series: MMBTA42LT3G
Canonical Name: MMBTA42LT3G NPN High Voltage Transistor
Subcategory: Bipolar (BJT) - Single

MMBTA42LT3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBTA42LT3G Estimated Pricing

Qty Low High
1+ $0.02 $0.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBTA42LT3G Features

  • High 300V collector-emitter voltage rating.
  • 500mA continuous collector current capability.
  • Compact SOT-23-3 surface-mount package.
  • Wide operating temperature range.
  • Pb-Free and Halogen Free construction.

MMBTA42LT3G Applications

  • Suitable for high-voltage switching.
  • Used in general amplification circuits.
  • Ideal for space-constrained designs.
  • Applications requiring high breakdown voltage.

MMBTA42LT3G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBTA42LT3G?

The maximum collector-emitter voltage is 300 Vdc.

What is the continuous collector current rating?

The continuous collector current is 500 mAdc.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the MMBTA42LT3G supplied in?

It is supplied in a SOT-23-3 (TO-236) surface-mount package.

What is the DC current gain (hFE) at 10mA?

The minimum DC current gain (hFE) at 10mA and 10V is 40.

What is the collector-emitter saturation voltage at 2mA/20mA?

The collector-emitter saturation voltage is a maximum of 500mV at 2mA base current and 20mA collector current.

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