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The MMBTA42LT1G is a high voltage NPN silicon transistor manufactured by ON Semiconductor. It is designed for applications requiring high voltage handling capabilities, with a maximum collector-emitter voltage of 300V for the MMBTA42/SMMBTA42 variants and 200V for the MMBTA43 variant. The device can handle a continuous collector current of up to 500mA.
This transistor features a DC current gain (hFE) of 40 at 30mA and 10V. The collector-emitter saturation voltage is a maximum of 0.5V at 2mA base current and 20mA collector current. It operates over a wide temperature range from -55°C to +150°C.
The MMBTA42LT1G is supplied in a compact SOT-23-3 (TO-236) surface mount package, making it suitable for space-constrained designs. The device is Pb-free and Halogen-free, complying with RoHS standards. Its high voltage rating and small package size make it a versatile component for various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MMBTA42LT1G has a maximum collector-emitter voltage of 300 Vdc.
The continuous collector current rating is 500 mAdc.
The DC current gain (hFE) is a minimum of 40 at 30mA collector current and 10V VCE.
The operating temperature range is -55°C to +150°C.
The MMBTA42LT1G is supplied in a SOT-23-3 (TO-236) package.
Yes, the MMBTA42LT1G is RoHS3 Compliant.