MMBTA42LT1 The ON Semiconductor MMBTA42LT1 is an NPN bipolar junction transistor designed for high voltage applications. It offers a 300V breakdown voltage and a 500mA continuous collector current.
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MMBTA42LT1

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MMBTA42LT1 is an NPN bipolar junction transistor designed for high voltage applications. It offers a 300V breakdown voltage and a 500mA continuous collector current.
Total Stock: 29,441 pcs
$ Price Range: $0.99

MMBTA42LT1 Available from 3 distributors

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2,386 pcs
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MMBTA42LT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBTA42LT1 Description

Short technical summary and product information.

The MMBTA42LT1 from ON Semiconductor is a single NPN bipolar junction transistor (BJT) suitable for high voltage applications. It features a maximum collector-emitter breakdown voltage of 300V and can handle a continuous collector current of up to 500mA. The transistor offers a power dissipation of 225mW and a transition frequency of 50MHz.

 

This device is housed in a compact SOT-23-3 (TO-236) surface mount package, making it ideal for space-constrained designs. The MMBTA42LT1 has a DC current gain (hFE) of at least 40 at 30mA and 10V, with a Vce saturation of 500mV maximum at 2mA and 20mA.

 

Its high voltage capability and small footprint make it a versatile component for various electronic circuits requiring reliable switching or amplification in high voltage environments.

MMBTA42LT1 Quick Information

Product Type: Bipolar Transistor
Canonical Name: MMBTA42LT1 NPN High Voltage Transistor
Subcategory: Single

MMBTA42LT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBTA42LT1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBTA42LT1 Features

  • High voltage NPN bipolar transistor.
  • 300V collector-emitter breakdown voltage.
  • 500mA continuous collector current.
  • 225mW power dissipation.
  • Surface mount SOT-23-3 package.

MMBTA42LT1 Applications

  • Suitable for high voltage circuits.
  • Used in switching applications.
  • Ideal for amplification tasks.
  • Compact design for space saving.

MMBTA42LT1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the MMBTA42LT1 transistor?

The MMBTA42LT1 has a maximum collector-emitter breakdown voltage of 300V.

What is the maximum continuous collector current for the MMBTA42LT1?

The MMBTA42LT1 can handle a maximum continuous collector current of 500mA.

What is the power dissipation rating of the MMBTA42LT1?

The power dissipation for the MMBTA42LT1 is 225mW.

What is the package type for the MMBTA42LT1 transistor?

The MMBTA42LT1 is supplied in a SOT-23-3 (TO-236) package.

What is the DC current gain (hFE) of the MMBTA42LT1?

The minimum DC current gain (hFE) for the MMBTA42LT1 is 40 at 30mA collector current and 10V collector-emitter voltage.

What is the Vce saturation voltage for the MMBTA42LT1?

The maximum Vce saturation voltage for the MMBTA42LT1 is 500mV at 2mA base current and 20mA collector current.

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