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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,933 pcs
|
2933 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,610 pcs
|
2610 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
1,090 pcs
|
1090 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
51 pcs
|
51 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
42 pcs
|
42 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Collector Current (DC) | |
| Collector Cut-Off Current | |
| Collector Emitter Saturation Voltage (Maximum @ IC = 20 mA, IB = 2 mA) | |
| Collector Output Capacitance | |
| Collector-Base Breakdown Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Saturation Voltage (Maximum @ 2 mA, 20 mA) | |
| Collector-Emitter Voltage | |
| Current | |
| DC Current Gain (Minimum @ 30 mA, 10 V) | |
| DC Current Gain (Minimum @ VCE=10 V; IC=1 mA) | |
| DC Current Gain (Minimum @ VCE=10 V; IC=30 mA) | |
| DC Current Gain (Minimum @ Vce=10 V, Ic=10 mA) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cut-off Current | |
| Emitter-Base Breakdown Voltage | |
| Frequency | |
| Junction and Storage Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Supplier Package | |
| Thermal Resistance Junction-to-Ambient | |
| Total Device Dissipation | |
| Transistor Type | |
| Transition Frequency (@ IC =10 mA; VCE =20 V) | |
| Transition Frequency (Unspecified condition) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMBTA42 is an NPN bipolar junction transistor (BJT) manufactured by On Semiconductor, designed for high voltage amplification and switching applications. It offers a high collector-emitter voltage rating of 300V and a continuous collector current of 500mA.
Key electrical characteristics include a DC current gain (hFE) of 40 at 30mA and 10V, a collector-emitter saturation voltage (Vce(sat)) of 500mV at 2mA/20mA, and a transition frequency (fT) of 50MHz. The transistor is constructed using epitaxial planar die technology.
This device is housed in a compact SOT-23-3 surface mount package, making it suitable for space-constrained designs. The operating temperature range is -55°C to 150°C.
Applications include general-purpose amplification and switching where high voltage is required. Its complementary PNP type is the MMBTA92.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MMBTA42 has a maximum collector-emitter voltage of 300V.
The MMBTA42 can handle a continuous collector current of 500mA.
The MMBTA42 operates between -55°C and 150°C.
The MMBTA42 is available in a SOT-23-3 surface mount package.
The DC current gain (hFE) is 40 at 30mA collector current and 10V collector-emitter voltage.
The transition frequency (fT) of the MMBTA42 is 50MHz.