| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMBTA42 is an NPN bipolar junction transistor from Diotec Semiconductor, suitable for high voltage amplification and switching applications. It is constructed using epitaxial planar die technology.
Key electrical characteristics include a collector-emitter breakdown voltage of 300V and a collector current of up to 500mA. The device offers a typical DC current gain (hFE) of 80 at 10mA and 10V, with a collector-emitter saturation voltage of 0.5V maximum at 2mA/20mA. Its transition frequency (fT) is 50MHz.
The transistor operates over a temperature range of -55°C to 150°C and has a total power dissipation of 350mW. It is housed in a compact SOT-23-3 surface mount package, making it suitable for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBTA42 is 300V.
The maximum continuous collector current (IC) for the MMBTA42 is 500mA.
The typical DC current gain (hFE) of the MMBTA42 is 80 at 10mA collector current and 10V collector-emitter voltage.
The MMBTA42 transistor operates between -55°C and 150°C.
The MMBTA42 is available in a SOT-23-3 (TO-236) surface mount package.