| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1,575 pcs
|
1575 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
500 pcs
$0.07
|
500 pcs |
$0.07
|
1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The MMBTA42 is an NPN epitaxial planar transistor from Fairchild Semiconductor, suitable for medium power amplification and switching applications. It is designed as a high voltage amplifier.
Key electrical characteristics include a collector-emitter breakdown voltage of 300V and a collector-base breakdown voltage of 300V. The device can handle a continuous collector current of up to 0.2A. Its DC current gain (hFE) is rated at a minimum of 25 at 1mA collector current, 40 at 10mA, and 40 at 30mA, all measured at 10V collector-emitter voltage.
The transistor features a collector-emitter saturation voltage of 0.5V maximum and a base-emitter saturation voltage of 0.9V maximum at a collector current of 20mA and base current of 2mA. The collector output capacitance is typically 3pF at 20V collector-base voltage and 1MHz frequency. The transition frequency (fT) is a minimum of 50MHz at 10mA collector current and 20V collector-emitter voltage.
Packaged in a SOT-23 surface mount package, the MMBTA42 is supplied on tape and reel with a standard package quantity of 3000 units. It operates within a junction and storage temperature range of -55°C to +150°C. The total device dissipation is rated at 0.35W, with a thermal resistance from junction to ambient of 357°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 300V.
The maximum continuous collector current is 0.2A.
The MMBTA42 is supplied in a SOT-23 package.
The DC current gain is a minimum of 40 at 10mA collector current.
The junction and storage temperature range is -55°C to +150°C.