MMBTA42 The MMBTA42 is an NPN bipolar transistor from Fairchild Semiconductor, designed for high voltage amplification. It features a 300V breakdown voltage and comes in a SOT-23 package.
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MMBTA42

Available from 2 distributors
Mfr Name: Fairchild Camera&Instrument
Fairchild Camera&Instrument
The MMBTA42 is an NPN bipolar transistor from Fairchild Semiconductor, designed for high voltage amplification. It features a 300V breakdown voltage and comes in a SOT-23 package.
✓ Total Stock: 2,075 pcs
$ Price Range: $0.07

MMBTA42 Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,575 pcs
1575 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
500 pcs
$0.07 ℹ
Qty Price
0+ 0.07
500 pcs $0.07
QtyPrice
0+ 0.07
1 On Request On Request On Request On Request On Request

MMBTA42 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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MMBTA42 Description

Short technical summary and product information.

The MMBTA42 is an NPN epitaxial planar transistor from Fairchild Semiconductor, suitable for medium power amplification and switching applications. It is designed as a high voltage amplifier.

 

Key electrical characteristics include a collector-emitter breakdown voltage of 300V and a collector-base breakdown voltage of 300V. The device can handle a continuous collector current of up to 0.2A. Its DC current gain (hFE) is rated at a minimum of 25 at 1mA collector current, 40 at 10mA, and 40 at 30mA, all measured at 10V collector-emitter voltage.

 

The transistor features a collector-emitter saturation voltage of 0.5V maximum and a base-emitter saturation voltage of 0.9V maximum at a collector current of 20mA and base current of 2mA. The collector output capacitance is typically 3pF at 20V collector-base voltage and 1MHz frequency. The transition frequency (fT) is a minimum of 50MHz at 10mA collector current and 20V collector-emitter voltage.

 

Packaged in a SOT-23 surface mount package, the MMBTA42 is supplied on tape and reel with a standard package quantity of 3000 units. It operates within a junction and storage temperature range of -55°C to +150°C. The total device dissipation is rated at 0.35W, with a thermal resistance from junction to ambient of 357°C/W.

MMBTA42 Quick Information

Product Type: NPN Transistor
Canonical Name: MMBTA42 NPN High Voltage Amplifier
Subcategory: NPN

MMBTA42 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBTA42 Estimated Pricing

Qty Low High
1+ $0.77 $0.77

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBTA42 Features

  • NPN high voltage amplifier transistor.
  • 300V collector-emitter breakdown voltage.
  • 0.2A continuous collector current.
  • SOT-23 surface mount package.
  • Minimum 50MHz transition frequency.

MMBTA42 Applications

  • Suitable for high-voltage switching circuits
  • Used in RF amplification applications
  • Ideal for power regulation modules
  • Applicable in high-speed switching designs

MMBTA42 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the MMBTA42?

The collector-emitter breakdown voltage is 300V.

What is the maximum collector current for the MMBTA42?

The maximum continuous collector current is 0.2A.

What package type is the MMBTA42 supplied in?

The MMBTA42 is supplied in a SOT-23 package.

What is the DC current gain (hFE) of the MMBTA42 at 10mA?

The DC current gain is a minimum of 40 at 10mA collector current.

What is the operating temperature range for the MMBTA42?

The junction and storage temperature range is -55°C to +150°C.

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