| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21,000 pcs
|
21000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,803 pcs
|
1803 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Tape & Reel |
The MMBTA42 from CJ is an NPN epitaxial planar bipolar junction transistor designed for medium power amplification and switching applications. It features a high collector-emitter breakdown voltage of 300V and a collector current of up to 0.2A.
This transistor is ideal for use as a high voltage amplifier. It comes in a compact SOT-23 package, suitable for surface mount designs. The device also has a complementary PNP type available, the MMBTA92.
Key electrical characteristics include a collector-emitter saturation voltage of 0.5V (typical) and a DC current gain (hFE) ranging from 25 to 40 depending on the collector current. The transition frequency (fT) is 50MHz minimum at 10mA collector current and 20V collector-emitter voltage.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MMBTA42 has a maximum collector-emitter voltage (VCEO) of 300V.
The MMBTA42 transistor has a maximum DC collector current (IC) of 0.2A.
The MMBTA42 transistor is supplied in a SOT-23 package.
The typical DC current gain (hFE) of the MMBTA42 at 1mA collector current is 25.
The transition frequency (fT) of the MMBTA42 is a minimum of 50MHz.
