| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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779 pcs
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779 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor MMBTA28 is an NPN Darlington transistor designed for applications requiring extremely high current gain at collector currents up to 500 mA. This device offers a maximum collector-emitter voltage of 80V and a continuous collector current of 800mA.
Key electrical characteristics include a DC current gain (hFE) of 10000 at 100mA and 5V, and a collector-emitter saturation voltage of 1.5V maximum at 100mA. The gain-bandwidth product is 125MHz.
The MMBTA28 operates within a temperature range of -55°C to 150°C. It is housed in a compact SOT-23-3 surface mount package, making it suitable for space-constrained designs. The device is supplied in tape and reel packaging with a standard quantity of 3000 units.
This transistor is designed for applications requiring high current gain. It is manufactured by ON Semiconductor and is RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBTA28 is 80V.
The MMBTA28 transistor has a continuous collector current rating of 800mA.
The DC current gain (hFE) of the MMBTA28 is a minimum of 10000 at 100mA collector current and 5V collector-emitter voltage.
The MMBTA28 operates within a temperature range of -55°C to 150°C.
The MMBTA28 is supplied in a SOT-23-3 surface mount package.
Yes, the MMBTA28 is RoHS3 compliant.