MMBTA14LT1G The MMBTA14LT1G is an NPN Darlington transistor from ON Semiconductor. It offers a 30V collector-emitter voltage and a 300mA continuous collector current, housed in a compact SOT-23-3 package.
Mfr Part #:

MMBTA14LT1G

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBTA14LT1G is an NPN Darlington transistor from ON Semiconductor. It offers a 30V collector-emitter voltage and a 300mA continuous collector current, housed in a compact SOT-23-3 package.
Total Stock: 487,394 pcs
$ Price Range: $0.99

MMBTA14LT1G Available from 6 distributors

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MMBTA14LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Emitter Breakdown Voltage
Current
DC Current Gain (Minimum @ 100 mA, 5 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Junction and Storage Temperature
Leakage Current (Maximum @ VCB = 30 Vdc, IE = 0)
Leakage Current (Maximum @ VEB = 10 Vdc, IC = 0)
Mounting Type
Operating Temperature
Pb-Free
Power
Supplier Device Package
Supplier Package
Tape & Reel
Total Device Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBTA14LT1G Description

Short technical summary and product information.

The MMBTA14LT1G is an NPN Darlington amplifier transistor manufactured by ON Semiconductor. It is designed for applications requiring high current gain, with a minimum DC current gain (hFE) of 20000 at 100mA and 5V.

 

This transistor features a maximum collector-emitter voltage (VCES) of 30V and a continuous collector current (IC) of 300mA. The Vce saturation voltage is a maximum of 1.5V at 100µA base current and 100mA collector current. It operates at frequencies up to 125MHz.

 

Packaged in a surface-mount SOT-23-3 (TO-236) case, the MMBTA14LT1G is suitable for automated assembly processes. The device operates across a wide temperature range from -55°C to 150°C (TJ). It is Pb-Free and Halogen Free compliant.

 

Key electrical characteristics include a breakdown voltage of 30Vdc, low leakage currents (ICBO and IEBO) of 100nAdc, and a typical power dissipation of 225mW on an FR-5 board at 25°C.

MMBTA14LT1G Quick Information

Product Type: Transistor
Canonical Name: NPN Darlington Transistor
Subcategory: Single

MMBTA14LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBTA14LT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBTA14LT1G Features

  • NPN Darlington amplifier transistor.
  • 30V collector-emitter voltage rating.
  • 300mA continuous collector current.
  • High DC current gain (hFE) of 20000.
  • Surface mount SOT-23-3 package.

MMBTA14LT1G Applications

  • Suitable for high-speed switching applications.
  • Ideal for automotive and industrial circuits.
  • Used in low-voltage signal amplification.
  • Applicable in power management modules.

MMBTA14LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBTA14LT1G?

The maximum collector-emitter voltage (VCES) for the MMBTA14LT1G is 30 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) for the MMBTA14LT1G is 300 mAdc.

What is the DC current gain (hFE) at 100mA and 5V?

The minimum DC current gain (hFE) at 100mA and 5V is 20000.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the MMBTA14LT1G supplied in?

The MMBTA14LT1G is supplied in a SOT-23-3 (TO-236) surface mount package.

Is the MMBTA14LT1G RoHS compliant?

Yes, the MMBTA14LT1G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1.

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