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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,450 pcs
|
2450 pcs | On Request | 1 | On Request | On Request | 0149 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter On Voltage | |
| Collector Current (Maximum @ Continuous) | |
| Collector Current (Maximum @ Max) | |
| Collector Cutoff Current (Maximum @ Max) | |
| Collector Cutoff Current (Maximum @ VCB = 30 Vdc, IE = 0) | |
| Collector Emitter Saturation Voltage (Maximum @ IC = 100 mAdc, IB = 0.1 mAdc) | |
| Collector Emitter Voltage (Maximum @ Max) | |
| Collector Emitter Voltage (Maximum) | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| Current-Gain - Bandwidth Product | |
| DC Current Gain (Minimum @ 150 mA, 10 V) | |
| DC Current Gain (Minimum @ IC = 100 mAdc, VCE = 5.0 Vdc) | |
| DC Current Gain (Minimum @ IC = −10 mAdc, VCE = −5.0 Vdc) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-Base Voltage | |
| Frequency | |
| Frequency - Transition | |
| Junction and Storage Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Thermal Resistance Junction To Ambient (Maximum @ Alumina Substrate) | |
| Thermal Resistance Junction To Ambient (Maximum @ FR -5 Board) | |
| Total Device Dissipation (Maximum @ Alumina Substrate, TA = 25 °C) | |
| Total Device Dissipation (Maximum @ FR -5 Board, TA = 25 °C) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor MMBTA14LT1 is a single NPN Darlington bipolar junction transistor (BJT) housed in a surface-mountable SOT-23-3 package. This device is rated for a maximum collector-emitter voltage (Vces) of 30V and a continuous collector current (Ic) of 300mA.
Key electrical characteristics include a minimum DC current gain (hFE) of 5000 at 10mA/5V and 10000 at 100mA/5V, with a typical collector-emitter saturation voltage (Vce(sat)) of 1.5V at 100mA/0.1mA. The current-gain bandwidth product (fT) is typically 125MHz at 10mA/5V.
Thermal specifications include a total device dissipation of 225mW on an FR-5 board and a junction-to-ambient thermal resistance of 556°C/W. The operating and storage temperature range is -55°C to +150°C.
This transistor is suitable for various amplification and switching applications where a high current gain is required. Its SOT-23-3 package makes it ideal for space-constrained designs on printed circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (V(BR)CES) is 30 Vdc.
The continuous collector current (IC) is 300 mAdc.
The operating temperature range is -55°C to +150°C.
The transistor is available in a TO-236-3, SC-59, SOT-23-3 package.
The RoHS status is ROHS3 Compliant.
The Moisture Sensitivity Level is 1 (Unlimited).