MMBTA13LT1G The MMBTA13LT1G is an NPN Darlington transistor from ON Semiconductor. It features a 30V collector-emitter voltage and a 300mA continuous collector current, housed in a SOT-23 package.
Mfr Part #:

MMBTA13LT1G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBTA13LT1G is an NPN Darlington transistor from ON Semiconductor. It features a 30V collector-emitter voltage and a 300mA continuous collector current, housed in a SOT-23 package.
Total Stock: 197,631 pcs
$ Price Range: $0.99

MMBTA13LT1G Available from 5 distributors

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MMBTA13LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Emitter Breakdown Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Leakage Current (Maximum @ VCB = 30 Vdc, IE = 0)
Leakage Current (Maximum @ VEB = 10 Vdc, IC = 0)
Mounting Type
Operating Temperature
Pb-Free
Power
Supplier Device Package
Thermal Resistance Junction-to-Ambient
Total Device Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBTA13LT1G Description

Short technical summary and product information.

The MMBTA13LT1G is an NPN Darlington transistor manufactured by ON Semiconductor. This component is designed for applications requiring high current gain, offering a minimum DC current gain of 10000 at 100mA and 5V.

 

Key electrical specifications include a maximum collector-emitter voltage of 30V and a continuous collector current of 300mA. The saturation voltage (Vce(sat)) is a maximum of 1.5V at 100µA base current and 100mA collector current. It operates at frequencies up to 125MHz.

 

This transistor is supplied in a compact SOT-23-3 surface-mount package, suitable for various electronic designs. The operating temperature range is from -55°C to 150°C. The device is Pb-Free and Halogen Free.

 

It is suitable for amplification and switching applications where high gain is essential.

MMBTA13LT1G Quick Information

Product Type: NPN Darlington Transistor
Series: MMBTA13LT1G
Canonical Name: MMBTA13LT1G NPN Darlington Transistor
Subcategory: Bipolar (BJT) - Single

MMBTA13LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBTA13LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBTA13LT1G Features

  • NPN Darlington transistor type.
  • 30V collector-emitter voltage rating.
  • 300mA continuous collector current.
  • High DC current gain of 10000.
  • SOT-23-3 surface mount package.

MMBTA13LT1G Applications

  • Suitable for switching circuits
  • Used in signal amplification
  • Ideal for space-constrained designs
  • Applicable in automotive and consumer electronics

MMBTA13LT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBTA13LT1G?

The maximum collector-emitter voltage is 30 Vdc.

What is the continuous collector current rating?

The continuous collector current is 300 mAdc.

What is the DC current gain (hFE) of the MMBTA13LT1G?

The DC current gain is a minimum of 10000 at 100mA collector current and 5V collector-emitter voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the MMBTA13LT1G supplied in?

It is supplied in a SOT-23-3 package.

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