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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
110 pcs
|
110 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (Minimum @ 100 mA, 5 V) | |
| DC Current Gain (Minimum) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Height | |
| Length | |
| Maximum Collector Cut-off Current | |
| Mounting Style | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature (Minimum/Maximum) | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Width |
The MMBTA13 is a single NPN Darlington transistor manufactured by On Semiconductor. It is designed for applications requiring high current gain, with a minimum DC current gain (hFE) of 10000 at 100mA collector current and 5V collector-emitter voltage. The transistor can handle a maximum collector current of 0.3A and has a collector-emitter voltage rating of 30V.
This component operates within a temperature range of -55°C to +150°C. It is packaged in a TO-236-3, SC-59, SOT-23-3 surface-mount package, making it suitable for space-constrained designs. The MMBTA13 is also characterized by its saturation voltage of 1.5V maximum at 100µA base current and 100mA collector current, and a transition frequency of 125MHz.
Key electrical specifications include a maximum collector cut-off current of 0.1µA and an emitter-base voltage of 10V. The power dissipation is rated at 350mW. The MMBTA13 is a reliable choice for general-purpose amplification and switching applications where high gain is essential.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBTA13 is 30 V.
The maximum continuous collector current for the MMBTA13 is 0.3 A.
The minimum DC current gain (hFE) of the MMBTA13 is 5000.
The MMBTA13 transistor operates between -55 °C and +150 °C.
The MMBTA13 is supplied in a SOT-23 package.
The MMBTA13 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MMBTA13 is 1 Unlimited.