MMBTA06WT1G The ON Semiconductor MMBTA06WT1G is an NPN silicon transistor designed for general-purpose applications. It features a maximum collector-emitter voltage of 80V and a continuous collector current of 500mA.
Mfr Part #:

MMBTA06WT1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MMBTA06WT1G is an NPN silicon transistor designed for general-purpose applications. It features a maximum collector-emitter voltage of 80V and a continuous collector current of 500mA.
Total Stock: 80,039 pcs
$ Price Range: $0.99

MMBTA06WT1G Available from 4 distributors

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MMBTA06WT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Emitter Saturation Voltage (Max) @ Ib, Ic
Current
Current-Gain - Bandwidth Product
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Junction and Storage Temperature
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Thermal Resistance Junction-to-Ambient
Total Device Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBTA06WT1G Description

Short technical summary and product information.

The ON Semiconductor MMBTA06WT1G is a versatile NPN silicon transistor housed in a compact SC-70 surface-mount package. It is rated for a maximum collector-emitter voltage of 80V and can handle a continuous collector current of up to 500mA. The transistor exhibits a DC current gain (hFE) of 100 at 100mA and 1V, with a saturation voltage of 250mV at 10mA base current and 100mA collector current.

 

With a gain-bandwidth product of 100MHz, this device is suitable for various switching and amplification tasks. It operates across a wide temperature range from -55°C to 150°C. The device is Pb-free and halogen-free, complying with RoHS standards. Its small footprint and surface-mount capability make it ideal for space-constrained electronic designs.

 

Key electrical characteristics include a collector-base voltage of 80V and an emitter-base voltage of 4.0V. The device's thermal performance is supported by a total power dissipation of 460mW on an FR-5 board and a junction-to-ambient thermal resistance of 272°C/W. The MMBTA06WT1G is also qualified under the S prefix for automotive applications, meeting AEC-Q101 standards.

MMBTA06WT1G Quick Information

Product Type: NPN Silicon Transistor
Series: MMBTA06WT1G
Canonical Name: MMBTA06WT1G NPN Silicon Transistor
Subcategory: Bipolar (BJT) - Single

MMBTA06WT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MMBTA06WT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBTA06WT1G Features

  • NPN silicon transistor for general applications.
  • 80V collector-emitter voltage rating.
  • 500mA continuous collector current.
  • 100MHz gain-bandwidth product.
  • Surface mount SC-70 package.

MMBTA06WT1G Applications

  • Suitable for general switching tasks.
  • Used in amplification circuits.
  • Ideal for space-constrained designs.
  • Automotive applications supported (AEC-Q101).

MMBTA06WT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBTA06WT1G?

The maximum collector-emitter voltage is 80 Vdc.

What is the continuous collector current rating?

The continuous collector current is 500 mAdc.

What is the DC current gain (hFE) at 100mA and 1V?

The minimum DC current gain (hFE) is 100 at 100mA and 1V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the MMBTA06WT1G supplied in?

The MMBTA06WT1G is supplied in an SC-70-3 (SOT323) package.

Is the MMBTA06WT1G RoHS compliant?

Yes, the MMBTA06WT1G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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