| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
800,000 pcs
|
800000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
381,020 pcs
|
381020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMBTA06LT3G is an NPN bipolar junction transistor (BJT) manufactured by On Semiconductor. This component is designed for general-purpose amplification and switching applications.
Key electrical characteristics include a collector-emitter breakdown voltage of 80V and a continuous collector current rating of 500mA. It offers a DC current gain (hFE) of 100 at 100mA and 1V. The transistor has a typical current gain-bandwidth product (fT) of 100MHz, making it suitable for moderate frequency applications.
The device operates within a temperature range of -55°C to 150°C (TJ). It is supplied in a compact SOT-23-3 surface mount package, identified as TO-236-3 or SC-59, facilitating integration into compact electronic designs.
Environmental compliance includes RoHS3 compliance, MSL 1, and REACH unaffected status, indicating suitability for various manufacturing and regulatory environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 80V.
The maximum continuous collector current is 500mA.
The operating temperature range is -55°C to +150°C.
The MMBTA06LT3G is supplied in a TO-236-3, SC-59, SOT-23-3 package.
The RoHS status is RoHS3 Compliant.