MMBTA06LT1 The On Semiconductor MMBTA06LT1 is an NPN Bipolar Junction Transistor designed for general-purpose applications. It features a breakdown voltage of 80V and a continuous collector current of 500mA.
Mfr Part #:

MMBTA06LT1

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MMBTA06LT1 is an NPN Bipolar Junction Transistor designed for general-purpose applications. It features a breakdown voltage of 80V and a continuous collector current of 500mA.
Total Stock: 7,352 pcs
$ Price Range: $0.99

MMBTA06LT1 Available from 5 distributors

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MMBTA06LT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter On Voltage
Collector Cutoff Current
Collector-Base Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Halogen Free
IC (Maximum)
Junction and Storage Temperature
Mounting Type
PD (Maximum @ TA = 25 °C, FR -5 Board)
Pb-Free
Power
Supplier Device Package
Thermal Resistance Junction-to-Ambient
Transistor Type
VCE(sat) (Maximum @ IC=100 mA, IB=10 mA)
VCEO (Minimum @ IC = -1.0 mAdc, IB = 0)
Vce Saturation (Max) @ Ib, Ic
Voltage
fT (Minimum @ IC = 10 mA, VCE = 2 V)

MMBTA06LT1 Description

Short technical summary and product information.

The MMBTA06LT1 from On Semiconductor is a single NPN bipolar junction transistor (BJT) housed in a compact SOT-23-3 surface mount package. This device offers a collector-emitter breakdown voltage of 80V and can handle a continuous collector current of up to 500mA. Its DC current gain (hFE) is a minimum of 100 at 100mA collector current and 1V VCE. The transistor exhibits a current-gain bandwidth product (fT) of 100MHz, making it suitable for various switching and amplification applications.

 

With a maximum power dissipation of 225mW on an FR-5 board at 25°C, and a junction-to-ambient thermal resistance of 556°C/W, thermal management should be considered for demanding applications. The operating temperature range is from -55°C to +150°C. The SOT-23-3 package is ideal for space-constrained designs, and its surface mount capability facilitates automated assembly processes. The device is Pb-Free and Halogen Free, aligning with environmental compliance standards.

MMBTA06LT1 Quick Information

Product Type: Bipolar Junction Transistor
Canonical Name: MMBTA06LT1 NPN Bipolar Junction Transistor
Subcategory: Single

MMBTA06LT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBTA06LT1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBTA06LT1 Features

  • 80V collector-emitter breakdown voltage.
  • 500mA continuous collector current.
  • 100MHz current-gain bandwidth product.
  • SOT-23-3 surface mount package.
  • Pb-Free and Halogen Free.

MMBTA06LT1 Applications

  • Used in switching power supplies
  • Suitable for motor control circuits
  • Ideal for signal amplification
  • Applicable in compact electronic devices

MMBTA06LT1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBTA06LT1?

The MMBTA06LT1 has a maximum collector-emitter breakdown voltage of 80 Vdc.

What is the continuous collector current rating of the MMBTA06LT1?

The MMBTA06LT1 can handle a continuous collector current of 500 mAdc.

What is the package type for the MMBTA06LT1 transistor?

The MMBTA06LT1 is supplied in a SOT-23-3 (TO-236) surface mount package.

What is the gain-bandwidth product of the MMBTA06LT1?

The current-gain bandwidth product (fT) for the MMBTA06LT1 is 100 MHz.

What is the RoHS status of the MMBTA06LT1?

The MMBTA06LT1 is RoHS3 Compliant.

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