| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |||||||||
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1,472 pcs
$0.14
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1472 pcs |
$0.14
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1 | On Request | On Request | On Request | On Request | On Request |
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This NPN bipolar junction transistor, part number MMBTA06-7-F, is manufactured by On Semiconductor. It is designed for surface mount applications and comes in a compact SOT-23-3 package.
The transistor features a maximum collector emitter breakdown voltage of 80V and can handle a continuous collector current of up to 500mA. Its maximum power dissipation is rated at 300mW, with a transition frequency of 100MHz. The operating temperature range is from -55°C to 150°C.
Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 100mA and 1V, and a Vce saturation of 250mV at 10mA, 100mA. The collector cutoff current is a maximum of 100nA.
This component is suitable for various general-purpose amplification and switching applications where a small surface-mount transistor is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V.
SOT-23-3 surface-mount package.
-55°C to 150°C.
0.5A.
100MHz.
Minimum 100 at 100mA collector current and 1V VCE.
300mW.