MMBTA06-7-F The Diodes Incorporated MMBTA06-7-F is an NPN bipolar junction transistor in a SOT-23-3 package. It is designed for low power amplification and switching applications.
Mfr Part #:

MMBTA06-7-F

Available from 5 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The Diodes Incorporated MMBTA06-7-F is an NPN bipolar junction transistor in a SOT-23-3 package. It is designed for low power amplification and switching applications.
Total Stock: 1,468,028 pcs
$ Price Range: $0.99

MMBTA06-7-F Available from 5 distributors

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MMBTA06-7-F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current Cutoff
Collector-Base Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Frequency - Transition
Halogen Free
Mounting Type
Operating Temperature
Peak Collector Current
Power
Power Dissipation
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBTA06-7-F Description

Short technical summary and product information.

The MMBTA06-7-F from Diodes Incorporated is an NPN medium power transistor housed in a compact SOT-23-3 surface mount package. This device is engineered for epitaxial planar die construction, making it suitable for low power amplification and switching tasks.

 

Key electrical characteristics include a maximum collector-emitter voltage of 80V and a maximum collector current of 500mA. It offers a minimum DC current gain (hFE) of 100 at 100mA and 1V, with a Vce saturation of 250mV at 10mA and 100mA. The transition frequency is rated at 100MHz.

 

Operating within a temperature range of -55°C to 150°C, the MMBTA06-7-F has a power dissipation of 300mW. The terminals are finished with matte tin plating, solderable per MIL-STD-202, Method 208. This transistor is part of a complementary pair with PNP types MMBTA55 and MMBTA56.

MMBTA06-7-F Quick Information

Product Type: NPN Transistor
Canonical Name: MMBTA06-7-F NPN Medium Power Transistor
Subcategory: Bipolar (BJT)

MMBTA06-7-F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

MMBTA06-7-F Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBTA06-7-F Features

  • NPN medium power transistor.
  • 80V collector-emitter breakdown voltage.
  • 500mA maximum collector current.
  • SOT-23-3 surface mount package.
  • Ideal for low power amplification.

MMBTA06-7-F Applications

  • Suitable for low-power switching applications.
  • Ideal for signal amplification in compact devices.
  • Used in automotive electronic circuits.
  • Applicable in portable and battery-powered devices.
  • Suitable for general-purpose transistor switching.

MMBTA06-7-F FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBTA06-7-F?

The maximum collector-emitter voltage is 80V.

What is the maximum continuous collector current for this transistor?

The maximum continuous collector current is 500mA.

What is the power dissipation rating of the MMBTA06-7-F?

The power dissipation is 300mW at TA = +25°C.

What is the operating temperature range for the MMBTA06-7-F?

The operating temperature range is -55°C to 150°C.

What is the package type for the MMBTA06-7-F?

The package type is SOT-23-3.

Is the MMBTA06-7-F RoHS compliant?

Yes, it is RoHS3 compliant.

Is this transistor lead-free?

Yes, it is totally lead-free.

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