SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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1,672 pcs
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1672 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMBTA06 is an NPN bipolar junction transistor (BJT) manufactured by Galaxy Microelectronics. It is designed for general-purpose amplification and switching applications.
Key electrical characteristics include a collector current (Ic) of 500 mA and a collector-emitter breakdown voltage (Vceo) of 80 V. The transistor exhibits a typical DC current gain (Hfe) of 100 at 10 mA and 1 V, with a collector-emitter saturation voltage (Vcesat) of 250 mV at 100 mA and 10 mA. Its transition frequency (Ft) is 100 MHz, and it has a power dissipation (Pd) rating of 350 mW.
This component operates within a temperature range of -55 C to +150 C. It is supplied in a compact SOT-23 surface-mount package, making it suitable for space-constrained designs. The MMBTA06 is RoHS3 compliant, has an MSL of 1, and is REACH unaffected.
This transistor is a reliable choice for various electronic circuits requiring signal amplification or switching functionalities.
| Qty | Low | High |
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| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector current (Ic) for the MMBTA06 is 500 mA.
The collector-emitter breakdown voltage (Vceo) for the MMBTA06 is 80 V.
The MMBTA06 is supplied in a SOT-23 package.
The MMBTA06 operates within a temperature range of -55 C to +150 C.
The typical DC current gain (Hfe) for the MMBTA06 is 100 at 10 mA and 1 V.
