MMBTA05LT1G The ON Semiconductor MMBTA05LT1G is an NPN silicon transistor designed for general-purpose applications. It features a 60V collector-emitter voltage and 500mA continuous current capability.
Mfr Part #:

MMBTA05LT1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MMBTA05LT1G is an NPN silicon transistor designed for general-purpose applications. It features a 60V collector-emitter voltage and 500mA continuous current capability.
Total Stock: 1,176,478 pcs
$ Price Range: $0.99

MMBTA05LT1G Available from 4 distributors

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MMBTA05LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter On Voltage
Collector Current Cutoff
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Current
Current-Gain - Bandwidth Product
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Halogen Free
Junction and Storage Temperature
Lead Style
Mounting Type
Operating Temperature
Pb-Free
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBTA05LT1G Description

Short technical summary and product information.

The MMBTA05LT1G from ON Semiconductor is a single NPN bipolar junction transistor (BJT) housed in a compact SOT-23-3 package. This device is rated for a maximum collector-emitter voltage of 60V and can handle a continuous collector current of up to 500mA.

 

Key electrical characteristics include a DC current gain (hFE) of 100 at 100mA and 1V, and a saturation voltage (Vce(sat)) of 250mV at 10mA collector current and 100mA base current. The transistor operates at frequencies up to 100MHz.

 

With a power dissipation rating of 225mW, it is suitable for various switching and amplification tasks. The operating temperature range is from -55°C to 150°C. The device is surface-mounted and comes in a TO-236-3, SC-59, SOT-23-3 package.

 

This transistor is Pb-free and Halogen-free, meeting RoHS 3 compliance standards. Its robust specifications make it a reliable choice for electronic designs requiring a general-purpose NPN transistor in a small footprint.

MMBTA05LT1G Quick Information

Product Type: NPN Silicon Transistor
Canonical Name: MMBTA05LT1G NPN Silicon Transistor
Subcategory: Bipolar (BJT) - Single

MMBTA05LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBTA05LT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBTA05LT1G Features

  • NPN silicon transistor for general use.
  • 60V collector-emitter voltage rating.
  • 500mA continuous collector current.
  • 100MHz gain-bandwidth product.
  • Compact SOT-23-3 surface mount package.

MMBTA05LT1G Applications

  • Suitable for general switching applications.
  • Used in signal amplification circuits.
  • Ideal for compact electronic designs.
  • Low power dissipation requirements.

MMBTA05LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBTA05LT1G?

The maximum collector-emitter voltage is 60 Vdc.

What is the continuous collector current rating?

The continuous collector current is 500 mAdc.

What is the DC current gain (hFE) at 100mA and 1V?

The minimum DC current gain (hFE) is 100 at 100mA collector current and 1V collector-emitter voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the MMBTA05LT1G supplied in?

The MMBTA05LT1G is supplied in a SOT-23-3 (TO-236) package.

Is the MMBTA05LT1G RoHS compliant?

Yes, the MMBTA05LT1G is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1.

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