| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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285 pcs
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285 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMBTA05 is an NPN silicon epitaxial planar transistor manufactured by ON Semiconductor, suitable for switching and amplifier applications. It is housed in a compact SOT-23-3 surface-mount package.
Key electrical characteristics include a continuous collector current of 500 mA and a collector-emitter voltage of 60 V. The device offers a minimum DC current gain (hFE) of 100 at 100mA and 1V, with a maximum collector-emitter saturation voltage of 250mV at 10mA/100mA. Its gain-bandwidth product (fT) is typically 100 MHz.
Operating within a temperature range of -55°C to 150°C, the MMBTA05 has a power dissipation rating of 350 mW. The terminals are solderable per MIL-STD-202G, Method 208, and it is supplied in tape and reel packaging for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage of the MMBTA05 transistor is 60 V.
The MMBTA05 transistor has a continuous collector current of 500 mA.
The power dissipation for the MMBTA05 transistor is 350 mW.
The MMBTA05 transistor operates within a temperature range of -55°C to 150°C.
The MMBTA05 transistor is supplied in a SOT-23-3 surface mount package.