MMBT918LT1G The MMBT918LT1G is an NPN RF transistor from ON Semiconductor. It is designed for RF applications and comes in a surface-mount SOT-23-3 package.
Mfr Part #:

MMBT918LT1G

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBT918LT1G is an NPN RF transistor from ON Semiconductor. It is designed for RF applications and comes in a surface-mount SOT-23-3 package.
✓ Total Stock: 25,002 pcs
$ Price Range: $0.99

MMBT918LT1G Available from 6 distributors

✓ Authorised
✓ Non-Authorised

MMBT918LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Halogen Free
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Voltage

MMBT918LT1G Description

Short technical summary and product information.

The MMBT918LT1G is an NPN silicon RF transistor manufactured by ON Semiconductor. It is designed for VHF/UHF applications and features a maximum collector-emitter voltage of 15V and a continuous collector current of 50mA.

 

This transistor has a current gain (hFE) of 20 minimum at 3mA and 1V, and a noise figure of 6dB typical at 60MHz. Its frequency capability extends to 600MHz, with a power gain of 11dB typical at 200MHz. The device is rated for a power dissipation of 225mW at 25°C on an FR-5 board.

 

Packaged in a compact SOT-23-3 (TO-236) surface-mount case, the MMBT918LT1G is suitable for automated assembly processes. It operates across a wide temperature range of -55°C to 150°C.

 

The MMBT918LT1G is Pb-free and Halogen-free, complying with RoHS standards. It is supplied in tape and reel packaging, with a standard quantity of 3000 units per reel.

MMBT918LT1G Quick Information

Product Type: RF Transistor
Canonical Name: MMBT918LT1G NPN RF Transistor
Subcategory: RF Bipolar Junction Transistor (BJT)

MMBT918LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBT918LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT918LT1G Features

  • NPN silicon RF transistor for VHF/UHF.
  • 15V collector-emitter voltage rating.
  • 50mA continuous collector current.
  • 600MHz frequency capability.
  • SOT-23-3 surface-mount package.

MMBT918LT1G Applications

  • Suitable for RF amplifier circuits.
  • Used in VHF/UHF communication systems.
  • Ideal for high-frequency signal processing.
  • Compact package for space-constrained designs.

MMBT918LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBT918LT1G?

The maximum collector-emitter voltage is 15 Vdc.

What is the continuous collector current rating?

The continuous collector current is 50 mAdc.

What is the DC current gain (hFE) at typical operating conditions?

The DC current gain (hFE) is a minimum of 20 at 3mA collector current and 1V collector-emitter voltage.

What is the noise figure of this RF transistor?

The noise figure is 6 dB typical at 60MHz.

What is the frequency range for the MMBT918LT1G?

The transistor has a frequency capability of 600MHz.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the MMBT918LT1G supplied in?

It is supplied in a SOT-23-3 (TO-236) surface-mount package.

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