MMBT8099LT1G The ON Semiconductor MMBT8099LT1G is an NPN silicon amplifier transistor. It features a maximum collector-emitter voltage of 80V and a continuous collector current of 500mA.
Mfr Part #:

MMBT8099LT1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MMBT8099LT1G is an NPN silicon amplifier transistor. It features a maximum collector-emitter voltage of 80V and a continuous collector current of 500mA.
Total Stock: 89,475 pcs
$ Price Range: $0.99

MMBT8099LT1G Available from 3 distributors

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31,020 pcs
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MMBT8099LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Breakdown Voltage (Minimum @ IC = 10 mAdc, IB = 0)
Breakdown Voltage (Minimum @ IC = 100 mAdc, IE = 0)
Breakdown Voltage (Minimum @ IE = 10 mAdc, IC = 0)
Current
Current Gain (Minimum @ IC = 10 mA, VCE = 5 V)
Current Gain (Minimum @ IC = 100 mA, VCE = 5 V)
Current-Gain - Bandwidth Product
DC Current Gain (hFE) (Min) @ Ic, Vce
Forward Voltage (Nominal @ IC = 1 mA, VCE = 5 V)
Forward Voltage (Nominal @ IC = 10 mA, VCE = 5 V)
Frequency
Halogen Free
Mounting Type
Operating Temperature
Pb-Free
Power
Power Dissipation (Maximum @ Alumina Substrate, TA = 25 °C)
Saturation Voltage (Maximum @ IC = 100 mA, IB = 10 mA)
Supplier Device Package
Tape & Reel
Thermal Resistance (Nominal @ Alumina Substrate)
Thermal Resistance (Nominal @ FR -5 Board)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBT8099LT1G Description

Short technical summary and product information.

The ON Semiconductor MMBT8099LT1G is a single NPN bipolar junction transistor (BJT) designed for amplification applications. It operates with a maximum collector-emitter voltage of 80V and can handle a continuous collector current of up to 500mA.

 

This transistor offers a DC current gain (hFE) of at least 75 at 100mA and 5V, with a minimum gain of 100 at 1mA and 5V. The gain-bandwidth product (fT) is 150MHz at 10mA and 5V, indicating its suitability for moderate frequency applications.

 

The MMBT8099LT1G is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it ideal for space-constrained designs. It operates across a wide temperature range from -55°C to 150°C.

 

This device is Pb-free, Halogen-free/BFR-free, and RoHS compliant, aligning with environmental regulations.

MMBT8099LT1G Quick Information

Product Type: NPN Transistor
Canonical Name: NPN Silicon Amplifier Transistor
Subcategory: Single

MMBT8099LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBT8099LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT8099LT1G Features

  • NPN silicon amplifier transistor.
  • 80V collector-emitter voltage rating.
  • 500mA continuous collector current.
  • 150MHz gain-bandwidth product.
  • SOT-23-3 surface-mount package.

MMBT8099LT1G Applications

  • Suitable for high-voltage switching applications.
  • Used in low-current signal amplification circuits.
  • Ideal for switching power supplies and motor drivers.
  • Applicable in electronic switching and signal modulation.
  • Suitable for general-purpose transistor switching tasks.

MMBT8099LT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBT8099LT1G?

The maximum collector-emitter voltage is 80V.

What is the continuous collector current rating?

The continuous collector current is 500mA.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the MMBT8099LT1G supplied in?

It is supplied in a SOT-23-3 (TO-236) package.

Is the MMBT8099LT1G RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the gain-bandwidth product?

The gain-bandwidth product is 150MHz.

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