| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,495 pcs
|
2495 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Halogen Free | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMBT8099LT1 is an NPN silicon amplifier transistor manufactured by ON Semiconductor. It is designed for general-purpose amplification applications and features a maximum collector-emitter voltage of 80V and a continuous collector current of 500mA.
Key electrical characteristics include a DC current gain (hFE) of at least 75 at 100mA and 5V, and a gain-bandwidth product (fT) of 150MHz at 10mA and 5V. The transistor also has a low collector-emitter saturation voltage, with a maximum of 0.4V at 100mA and 5mA base current.
This component is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs. It operates over a wide temperature range of -55°C to 150°C.
The device is Pb-free, Halogen-free/BFR-free, and RoHS compliant, indicating its suitability for environmentally conscious manufacturing processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 80 Vdc.
The continuous collector current is 500 mAdc.
The operating temperature range is -55°C to 150°C.
It is supplied in a SOT-23-3 (TO-236) package.
The gain-bandwidth product is 150 MHz at 10 mAdc and 5.0 Vdc.