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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,495 pcs
|
2495 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage (Minimum @ IC = -100 µAdc, IE = 0) | |
| Breakdown Voltage (Minimum @ IC = 10 mAdc, IB = 0) | |
| Breakdown Voltage (Minimum @ IE = 10 μAdc, IC = 0) | |
| Current | |
| Current-Gain - Bandwidth Product | |
| DC Current Gain (Minimum @ IC = 100 mAdc, VCE = 5.0 Vdc) | |
| DC Current Gain (Minimum @ IC = −10 mAdc, VCE = −5.0 Vdc) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Forward Voltage (Typical @ IC = 1.0 mAdc, VCE = 5.0 Vdc) | |
| Forward Voltage (Typical @ IC = 10 mAdc, VCE = 5.0 Vdc) | |
| Frequency | |
| Halogen Free | |
| Leakage Current (Maximum @ VCB = 60 Vdc, IE = 0) | |
| Leakage Current (Maximum @ VCB = 80 Vdc, IE = 0) | |
| Leakage Current (Maximum @ VCE = 60 Vdc, IB = 0) | |
| Leakage Current (Maximum @ VEB = 4.0 Vdc, IC = 0) | |
| Leakage Current (Maximum @ VEB = 6.0 Vdc, IC = 0) | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum @ Alumina Substrate, TA = 25 °C) | |
| Power Dissipation (Maximum @ FR -5 Board, TA = 25 °C) | |
| Saturation Voltage (Maximum @ IC = 100 mAdc, IB = 10 mAdc) | |
| Saturation Voltage (Maximum @ IC = 100 mAdc, IB = 5.0 mAdc) | |
| Supplier Device Package | |
| Thermal Resistance (Typical @ Alumina Substrate (Note 2) | |
| Thermal Resistance (Typical @ FR -5 Board (Note 1) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMBT8099LT1 is an NPN silicon amplifier transistor manufactured by ON Semiconductor. It is designed for general-purpose amplification applications and features a maximum collector-emitter voltage of 80V and a continuous collector current of 500mA.
Key electrical characteristics include a DC current gain (hFE) of at least 75 at 100mA and 5V, and a gain-bandwidth product (fT) of 150MHz at 10mA and 5V. The transistor also has a low collector-emitter saturation voltage, with a maximum of 0.4V at 100mA and 5mA base current.
This component is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs. It operates over a wide temperature range of -55°C to 150°C.
The device is Pb-free, Halogen-free/BFR-free, and RoHS compliant, indicating its suitability for environmentally conscious manufacturing processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 80 Vdc.
The continuous collector current is 500 mAdc.
The operating temperature range is -55°C to 150°C.
It is supplied in a SOT-23-3 (TO-236) package.
The gain-bandwidth product is 150 MHz at 10 mAdc and 5.0 Vdc.