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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
195,000 pcs
|
195000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector - Emitter Saturation Voltage | |
| Configuration | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Gain Hfe (Minimum @ 2 mA, 10 V) | |
| Gain Hfe (Minimum) | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum) | |
| Supplier Device Package | |
| Temperature Operating (@ TJ) | |
| Temperature Operating (Minimum/Maximum) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor MMBT6521LT1G is a single NPN bipolar junction transistor (BJT) housed in a compact SOT-23-3 package. This device is designed for amplification applications, offering a maximum collector-emitter voltage of 25V and a continuous collector current of 100mA.
Key electrical characteristics include a maximum power dissipation of 225mW and a minimum DC current gain (hFE) of 300 at 2mA and 10V. The collector-emitter saturation voltage is a maximum of 500mV at 5mA collector current and 5mA base current. The transistor operates within a temperature range of -55°C to 150°C.
This component is suitable for surface mount assembly and is supplied on a reel. It meets RoHS3 compliance standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO Max) for the MMBT6521LT1G is 25V.
The continuous collector current rating for this transistor is 100mA.
The MMBT6521LT1G operates between -55°C and 150°C.
This transistor is supplied in a SOT-23-3 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.