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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage (Minimum @ IC = 1.0 mA) | |
| Breakdown Voltage (Minimum @ IC = 100 µA) | |
| Breakdown Voltage (Minimum @ IE = 10 µA) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Junction and Storage Temperature | |
| Leakage Current (Maximum @ VCB = 250 V) | |
| Leakage Current (Maximum @ VEB = 5.0 V) | |
| Mounting Type | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum @ TA = 25 °C, Alumina Substrate) | |
| Power Dissipation (Maximum @ TA = 25 °C, FR -5 Board) | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Sat (Maximum @ IC = 10 mA, IB = 1.0 mA) | |
| Vce Sat (Maximum @ IC = 20 mA, IB = 2.0 mA) | |
| Vce Sat (Maximum @ IC = 30 mA, IB = 3.0 mA) | |
| Vce Sat (Maximum @ IC = 50 mA, IB = 5.0 mA) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE (Minimum @ IC = -1.0 mA, VCE = -10 V) | |
| hfe (Minimum @ IC = 100 mA, VCE = 10 V) | |
| hfe (Minimum @ IC = 30 mA, VCE = 10 V) | |
| hfe (Minimum @ IC = 50 mA, VCE = 10 V) | |
| hfe (Minimum @ IC=10 mA, VCE=10 V) |
The MMBT6517LT1G is a high-voltage NPN silicon transistor manufactured by ON Semiconductor. It is designed for applications requiring high breakdown voltages, with a Collector-Emitter Voltage (VCEO) of 350V and a Collector-Base Voltage (VCBO) of 350V.
This transistor offers a continuous collector current (IC) of up to 100mA and a base current (IB) of 25mA. It operates within a junction and storage temperature range of -55°C to 150°C. The device is available in a compact SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs.
Key electrical characteristics include a DC Current Gain (hFE) ranging from 15 to 200 depending on the operating conditions. Saturation voltages (VCE(sat)) are specified at various current levels, with a maximum of 1V at 50mA collector current and 5mA base current. The transistor also has a frequency rating of 200MHz.
Environmental compliance includes RoHS3 compliance, Pb-Free, and Halogen-Free status, as indicated in the datasheet. The device is supplied in a SOT-23-3 package suitable for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the MMBT6517LT1G is 350V.
The continuous collector current (IC) for the MMBT6517LT1G is 100mA.
The operating junction and storage temperature range for the MMBT6517LT1G is -55°C to 150°C.
The MMBT6517LT1G is supplied in a SOT-23-3 (TO-236) package.
Yes, the MMBT6517LT1G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MMBT6517LT1G is 1.