MMBT6429LT1G The ON Semiconductor MMBT6429LT1G is an NPN bipolar transistor designed for amplification. It features a 45V collector-emitter voltage and 200mA continuous collector current.
Mfr Part #:

MMBT6429LT1G

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MMBT6429LT1G is an NPN bipolar transistor designed for amplification. It features a 45V collector-emitter voltage and 200mA continuous collector current.
Total Stock: 197,479 pcs
$ Price Range: $0.99

MMBT6429LT1G Available from 6 distributors

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MMBT6429LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Cutoff Current
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Halogen Free
Junction and Storage Temperature
Mounting Type
Operating Temperature
Pb-Free
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBT6429LT1G Description

Short technical summary and product information.

The ON Semiconductor MMBT6429LT1G is an NPN silicon amplifier transistor packaged in a SOT-23-3 (TO-236-3) surface-mount case. It is rated for a maximum collector-emitter voltage (VCEO) of 45V and a continuous collector current (IC) of 200mA.

 

This transistor operates across a wide temperature range of -55°C to 150°C (TJ). It offers a DC current gain (hFE) of 500 at 100µA and 5V, with a Vce saturation of 600mV at 5mA and 100mA. The device has a frequency rating of 700MHz and a power dissipation of 225 mW at 25°C on an FR-5 board.

 

It is compliant with RoHS3 standards and is supplied in tape and reel packaging with a standard quantity of 3000 units. The SOT-23-3 package is suitable for surface mounting applications.

 

Key specifications include a 45V collector-emitter voltage, 200mA continuous collector current, and a 700MHz frequency. The operating temperature range is -55°C to 150°C.

MMBT6429LT1G Quick Information

Product Type: Transistor
Canonical Name: NPN Silicon Amplifier Transistor
Subcategory: Single

MMBT6429LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBT6429LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT6429LT1G Features

  • NPN silicon amplifier transistor.
  • 45V collector-emitter voltage rating.
  • 200mA continuous collector current.
  • 700MHz operating frequency.
  • SOT-23-3 surface mount package.

MMBT6429LT1G Applications

  • Suitable for general amplification circuits.
  • Used in signal processing applications.
  • Ideal for low-power switching tasks.
  • Component in portable electronic devices.

MMBT6429LT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBT6429LT1G?

The maximum collector-emitter voltage (VCEO) for the MMBT6429LT1G is 45 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) rating for the MMBT6429LT1G is 200 mAdc.

What is the operating temperature range?

The operating temperature range for this transistor is -55°C to 150°C (TJ).

What package type is the MMBT6429LT1G supplied in?

The MMBT6429LT1G is supplied in a SOT-23-3 (TO-236-3) package suitable for surface mounting.

What is the DC current gain (hFE) of the MMBT6429LT1G?

The DC current gain (hFE) is a minimum of 500 at 100µA collector current and 5V collector-emitter voltage.

Is the MMBT6429LT1G RoHS compliant?

Yes, the MMBT6429LT1G is RoHS3 compliant.

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