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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
116,000 pcs
|
116000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,400 pcs
|
1400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-05-08 07:15:31 | |
|
980 pcs
|
980 pcs | On Request | 1 | On Request | On Request | 0627 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage (Minimum @ IC=1.0 mA, IB=0) | |
| Breakdown Voltage (Minimum @ IC=100 μA, IE=0) | |
| Current | |
| Current Gain (Minimum @ VCE = 5.0 V, IC = 1.0 mA) | |
| Current Gain (Minimum @ VCE = 5.0 V, IC = 10 mA) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Forward Voltage (Nominal/Maximum @ V CE = 5.0 V, IC = 1.0 mA) | |
| Frequency | |
| Leakage Current (Maximum @ V CB = 30 V, IE = 0) | |
| Leakage Current (Maximum @ V CE = 30 V, IB = 0) | |
| Leakage Current (Maximum @ V EB = 5.0 V, IB = 0) | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Saturation Voltage (Maximum @ IC = 10 mA, IB = 0.5 mA) | |
| Supplier Device Package | |
| Supplier Package | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| capacitance (Maximum @ V CB = 10 V, IE = 0, f = 1.0 MHz) | |
| capacitance (Maximum @ V EB = 0.5 V, IC = 0, f = 1.0 MHz) |
The MMBT6428 is an NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. This general-purpose amplifier transistor is designed for applications requiring collector currents up to 300mA. It features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 500mA.
Key electrical characteristics include a DC current gain (hFE) of 250 minimum at 100µA and 5V, and a collector-emitter saturation voltage (Vce(sat)) of 600mV maximum at 5mA base current and 100mA collector current. The gain bandwidth product (fT) is rated at 100-700MHz at 1.0mA and 5V.
This device comes in a compact SOT-23-3 surface mount package, making it suitable for space-constrained designs. The operating temperature range is -55°C to 150°C (TJ), and it has a total power dissipation of 350mW at 25°C ambient temperature. The thermal resistance junction to ambient is 357°C/W.
The MMBT6428 is suitable for various general-purpose amplification tasks in electronic circuits. Its small package size and robust electrical specifications make it a versatile component for both hobbyist and industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MMBT6428 has a maximum collector-emitter voltage of 50V.
The MMBT6428 can handle a continuous collector current of 500mA.
The operating and storage junction temperature range for the MMBT6428 is -55°C to 150°C.
The MMBT6428 is available in a SOT-23-3 package.
The DC Current Gain (hFE) of the MMBT6428 is a minimum of 250 at 100µA collector current and 5V collector-emitter voltage.
The gain bandwidth product (fT) for the MMBT6428 is between 100MHz and 700MHz at 1.0mA collector current and 5V collector-emitter voltage.