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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
300,000 pcs
|
300000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
67,020 pcs
|
67020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,645 pcs
|
2645 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
78 pcs
|
78 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request | |
|
22 pcs
|
22 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Base-Emitter On Voltage | |
| Collector Cutoff Current (Maximum @ VCB = 30 Vdc, IE = 0) | |
| Collector Cutoff Current (Maximum @ VCE = 25 Vdc, IB = 0) | |
| Collector Emitter Saturation Voltage (Maximum @ IC = 50 mAdc, IB = 0.5 mAdc) | |
| Collector Emitter Saturation Voltage (Maximum @ IC = 500 mAdc, IB = 0.5 mAdc) | |
| Collector Emitter Saturation Voltage (Maximum @ Ib, Ic) | |
| Collector Emitter Voltage (Maximum) | |
| Collector-Base Voltage | |
| Continuous Collector Current (Maximum @ Continuous) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ @ Ic, Vce) | |
| DC Current Gain Hfe (Minimum/Maximum @ IC = 10 mAdc, VCE = 5.0 Vdc) | |
| DC Current Gain Hfe (Minimum/Maximum @ IC = 100 mAdc, VCE = 5.0 Vdc) | |
| DC Current Gain Hfe (Minimum/Maximum @ IC = 500 mAdc, VCE = 5.0 Vdc) | |
| Emitter Cutoff Current | |
| Emitter-Base Voltage | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum @ TA = 25 °C, Alumina Substrate) | |
| Power Dissipation (Maximum @ TA = 25 °C, FR -5 Board) | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Thermal Resistance Junction To Ambient (Maximum @ Alumina Substrate) | |
| Thermal Resistance Junction To Ambient (Maximum @ FR -5 Board) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMBT6427LT1G from ON Semiconductor is an NPN silicon Darlington transistor designed for general-purpose applications. It features a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 500mA.
This device offers high DC current gain, with a minimum hFE of 20,000 at 100mA and 5V VCE. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 1.5V at 500mA collector current and 500µA base current. The operating temperature range is from -55°C to 150°C.
The MMBT6427LT1G is packaged in a SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs. It is supplied on tape and reel for automated assembly processes.
This transistor is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, meeting environmental standards for modern electronic manufacturing.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBT6427LT1G is 40 Vdc.
The continuous collector current (IC) rating for the MMBT6427LT1G is 500 mAdc.
The minimum DC current gain (hFE) at 100mA and 5V for the MMBT6427LT1G is 20,000.
The operating temperature range for the MMBT6427LT1G is -55°C to 150°C.
The MMBT6427LT1G is supplied in a SOT-23-3 (TO-236) surface-mount package.
Yes, the MMBT6427LT1G is RoHS3 compliant.