MMBT6427LT1G The ON Semiconductor MMBT6427LT1G is an NPN Darlington transistor with a 40V collector-emitter voltage and 500mA continuous collector current. It is supplied in a compact SOT-23-3 package.
Mfr Part #:

MMBT6427LT1G

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MMBT6427LT1G is an NPN Darlington transistor with a 40V collector-emitter voltage and 500mA continuous collector current. It is supplied in a compact SOT-23-3 package.
Total Stock: 370,765 pcs
$ Price Range: $0.99

MMBT6427LT1G Available from 6 distributors

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Non-Authorised

MMBT6427LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base - Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current (Maximum @ VCB = 30 Vdc, IE = 0)
Collector Cutoff Current (Maximum @ VCE = 25 Vdc, IB = 0)
Collector Emitter Saturation Voltage (Maximum @ IC = 50 mAdc, IB = 0.5 mAdc)
Collector Emitter Saturation Voltage (Maximum @ IC = 500 mAdc, IB = 0.5 mAdc)
Collector Emitter Saturation Voltage (Maximum @ Ib, Ic)
Collector Emitter Voltage (Maximum)
Collector-Base Voltage
Continuous Collector Current (Maximum @ Continuous)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) (Minimum @ @ Ic, Vce)
DC Current Gain Hfe (Minimum/Maximum @ IC = 10 mAdc, VCE = 5.0 Vdc)
DC Current Gain Hfe (Minimum/Maximum @ IC = 100 mAdc, VCE = 5.0 Vdc)
DC Current Gain Hfe (Minimum/Maximum @ IC = 500 mAdc, VCE = 5.0 Vdc)
Emitter Cutoff Current
Emitter-Base Voltage
Junction Temperature
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ TA = 25 °C, Alumina Substrate)
Power Dissipation (Maximum @ TA = 25 °C, FR -5 Board)
Storage Temperature
Supplier Device Package
Supplier Package
Thermal Resistance Junction To Ambient (Maximum @ Alumina Substrate)
Thermal Resistance Junction To Ambient (Maximum @ FR -5 Board)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBT6427LT1G Description

Short technical summary and product information.

The MMBT6427LT1G from ON Semiconductor is an NPN silicon Darlington transistor designed for general-purpose applications. It features a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 500mA.

 

This device offers high DC current gain, with a minimum hFE of 20,000 at 100mA and 5V VCE. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 1.5V at 500mA collector current and 500µA base current. The operating temperature range is from -55°C to 150°C.

 

The MMBT6427LT1G is packaged in a SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs. It is supplied on tape and reel for automated assembly processes.

 

This transistor is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, meeting environmental standards for modern electronic manufacturing.

MMBT6427LT1G Quick Information

Product Type: Darlington Transistor
Canonical Name: NPN Darlington Transistor
Subcategory: Darlington Transistors

MMBT6427LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBT6427LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT6427LT1G Features

  • NPN Darlington transistor for high gain.
  • 40V collector-emitter voltage rating.
  • 500mA continuous collector current.
  • SOT-23-3 surface-mount package.
  • Wide operating temperature range.

MMBT6427LT1G Applications

  • Suitable for general-purpose amplification.
  • Used in switching applications.
  • Ideal for low-power circuits.
  • Compact design for PCB mounting.

MMBT6427LT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBT6427LT1G?

The maximum collector-emitter voltage (VCEO) for the MMBT6427LT1G is 40 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) rating for the MMBT6427LT1G is 500 mAdc.

What is the minimum DC current gain (hFE) at 100mA and 5V?

The minimum DC current gain (hFE) at 100mA and 5V for the MMBT6427LT1G is 20,000.

What is the operating temperature range?

The operating temperature range for the MMBT6427LT1G is -55°C to 150°C.

What package type is the MMBT6427LT1G supplied in?

The MMBT6427LT1G is supplied in a SOT-23-3 (TO-236) surface-mount package.

Is the MMBT6427LT1G RoHS compliant?

Yes, the MMBT6427LT1G is RoHS3 compliant.

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