MMBT6427 The MMBT6427 is an NPN Darlington transistor from On Semiconductor designed for high current gain applications. It features a 40V collector-emitter voltage and 1.2A continuous collector current.
Mfr Part #:

MMBT6427

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBT6427 is an NPN Darlington transistor from On Semiconductor designed for high current gain applications. It features a 40V collector-emitter voltage and 1.2A continuous collector current.
Total Stock: 904,800 pcs
$ Price Range: $0.99

MMBT6427 Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
904,000 pcs
904000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
800 pcs
800 pcs On Request 1 On Request On Request On Request On Request On Request

MMBT6427 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBT6427 Description

Short technical summary and product information.

The MMBT6427 is an NPN Darlington transistor manufactured by On Semiconductor, designed for applications requiring high current gain at collector currents up to 1.2A. This device offers a collector-emitter voltage of 40V and a maximum continuous collector current of 1.2A.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 14000 at 500mA and 5V, and a collector-emitter saturation voltage (Vce(sat)) of 1.5V at 500µA and 500mA. The transistor operates within a temperature range of -55°C to 150°C.

 

Packaged in a compact SOT-23-3 surface mount package, the MMBT6427 is suitable for various electronic designs where space is a consideration. Its robust specifications make it a reliable choice for amplification and switching tasks in diverse applications.

MMBT6427 Quick Information

Product Type: NPN Darlington Transistor
Canonical Name: MMBT6427 NPN Darlington Transistor
Subcategory: NPN Darlington Transistor

MMBT6427 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBT6427 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT6427 Features

  • NPN Darlington transistor for high gain.
  • 40V collector-emitter voltage rating.
  • 1.2A maximum continuous collector current.
  • High DC current gain of 14000.
  • Compact SOT-23-3 surface mount package.

MMBT6427 Applications

  • Suitable for high current gain applications.
  • Used in general purpose amplification circuits.
  • Applicable for switching circuits.
  • Ideal for space-constrained designs.

MMBT6427 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage of the MMBT6427 transistor?

The collector-emitter voltage (Vceo) of the MMBT6427 is 40V.

What is the maximum continuous collector current for the MMBT6427?

The MMBT6427 can handle a maximum continuous collector current of 1.2A.

What is the DC current gain (hFE) of the MMBT6427?

The MMBT6427 has a minimum DC current gain of 14000 at 500mA collector current and 5V collector-emitter voltage.

What is the operating temperature range for the MMBT6427?

The MMBT6427 operates within a temperature range of -55°C to 150°C.

What package type is the MMBT6427 available in?

The MMBT6427 is available in a SOT-23-3 surface mount package.

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