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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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13,182 pcs
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13182 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMBT5771 is a single PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is packaged in a SOT-23-3 surface mount case, making it suitable for compact electronic designs.
This transistor features a maximum collector-emitter voltage of 15V and can handle a continuous collector current of up to 200mA. Its power dissipation is rated at 225mW. The DC current gain (hFE) is a minimum of 50 at 10mA and 300mV Vce. The saturation voltage (Vce Sat) is a maximum of 600mV at 5mA base current and 50mA collector current.
Operating temperature ranges from -55°C to 150°C (TJ). The MMBT5771 is designed for general-purpose amplification and switching applications where a small, surface-mountable PNP transistor is required.
Key specifications include its PNP type, 15V voltage rating, 200mA current capability, and SOT-23-3 package. It is suitable for various electronic circuits requiring a discrete PNP transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating for the MMBT5771 is 15V.
The MMBT5771 can handle a maximum continuous collector current of 200mA.
The MMBT5771 operates within a temperature range of -55°C to 150°C (TJ).
The MMBT5771 is supplied in a SOT-23-3 package.
The MMBT5771 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MMBT5771 is 1.